
Allicdata Part #: | ES2AA-FDITR-ND |
Manufacturer Part#: |
ES2AA-13-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 50V 2A SMA |
More Detail: | Diode Standard 50V 2A Surface Mount SMA |
DataSheet: | ![]() |
Quantity: | 55000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 920mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES2A |
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ES2AA-13-F Application Field and Working Principle
ES2AA-13-F is a single rectifier diode, which is a semiconductor device used for rectifying alternating current. It is specially designed for general purpose with a junction capacitance of 0.72 pF and a breakdown voltage of 140 V. It is widely used in a wide range of applications, such as medical and industrial devices, automotive, power management, and communication interface.
This diode has a simple and straightforward working principle. It allows current to flow in one direction and block the current in the opposite direction. The diode requires an external circuit to deliver the electrical power to it. When a positive voltage is applied over an anode, the electrons are forced to cross the junction and flow through the circuit. On the other hand, when a negative voltage is applied over the anode, the electrons are blocked at the junction. This is how it works as a rectifier.
The diode has a wide range of advantages, such as low power consumption, low cost, and excellent durability. It is also easy to install and maintain. In addition, it is highly reliable and efficient. As a result, the diode is widely used in a variety of applications in industry, automotive, healthcare, and communication technology.
The ES2AA-13-F diode is a reliable and efficient device for high-frequency rectification, and it has high tolerance to mechanical and electrical shock. It is also highly resistant to external elements like high temperature, vibrations, and electrical noise. In addition, the diode has a durable and robust design that can handle harsh environments and require less maintenance.
The ES2AA-13-F diode is also capable of integrating sophisticated functions and providing high performance at low costs. Its advanced integrated gate driver is capable of lowering the switching losses and making the rectifying junction more robust.The device is capable of being used in high-speed rectification up to tens of megahertz, allowing for a faster response time and higher efficiency.
In conclusion, the ES2AA-13-F diode is a reliable and efficient device for rectification. It is suitable for a wide range of applications, such as medical and industrial devices, automotive, power management, and communication interface. It has a wide range of advantages, such as low power consumption, low cost, and excellent durability. It is also highly reliable, efficient, and capable of integrating sophisticated functions while providing high performance at low costs.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
ES2AA-13-F | Diodes Incor... | -- | 55000 | DIODE GEN PURP 50V 2A SMA... |
ES2A-E3/52T | Vishay Semic... | 0.15 $ | 750 | DIODE GEN PURP 50V 2A DO2... |
ES2AHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AHE3_A/H | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA R3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-LTP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AAHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-E3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AHM3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A | ON Semicondu... | -- | 3000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AAHR3G | Taiwan Semic... | 0.08 $ | 3600 | DIODE GEN PURP 50V 2A DO2... |
ES2A M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A SMA... |
ES2AHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-13-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 50V 2A SMB... |
ES2AHE3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A SMB... |
ES2AHE3_A/I | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A R5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
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