
Allicdata Part #: | ES2AHE3_A/H-ND |
Manufacturer Part#: |
ES2AHE3_A/H |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 2A DO214AA |
More Detail: | Diode Standard 50V 2A Surface Mount DO-214AA (SMB) |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.12099 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 18pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ES2AHE3_A/H Application Field and Working Principle
ES2AHE3_A/H are rectifier diodes that belong to the single category. They are essentially switching devices that conduct electric current in one direction, blocking current forward in the opposite direction. ES2AHE3_A/H diodes are designed for use with circuits requiring low reverse current leakage, high forward voltage, and surge current. The ES2AHE3_A/H offer better performance and improved reliability compared to other types of rectifier diodes.
Application Field
ES2AHE3_A/H switching devices are used in a variety of electronic equipment, including power-factor-correction (PFC) adapters, solar inverters, bridge rectifiers, and other low-voltage applications. They have quickly become a preferred choice in the power electronics industry due to their excellent performance, high current surge capability, and low noise. They are also used in PLC power supplies, electric vehicle chargers, LED lighting, and consumer electronics.
Working Principle
The ES2AHE3_A/H is a single-diode rectifier formed by a two-terminal semiconductor device configured in a bridge configuration. It operates by controlling the current flow from the anode to the cathode by varying the reverse-biased voltage between the two. When reverse-biased, the diode effectively blocks current from passing through, while when forward-biased, the diode allows current to flow through the diode, thus performing the switching action. The diode can be used for various functions such as rectifying alternating current (AC) to direct current (DC), enabling a load to draw only DC power, and reducing the effects of AC ripple and other noise.
Furthermore, the use of the ES2AHE3_A/H in switching applications allows the designer to optimize the size and efficiency of the components used, and reduce the power supply noise. The device operates by taking advantage of the unique properties of crystalline silicon. The material contains a large number of differently sized crystals, known as grain boundaries, which act as paths of least resistance for current to travel. As the voltage is increased, the current conducts along the grain boundaries, allowing a fast switching action.
Conclusion
In conclusion, the ES2AHE3_A/H is a single-diode rectifier that uses its two-terminal semiconductor device configuration to control the current flow from the anode to the cathode. It is widely used in power electronics for its reliable performance, high current surge capability, and low noise. Its crystalline silicon construction allows for fast switching actions, making it suitable for reducing AC ripple and other switching applications. With its excellent performance, the ES2AHE3_A/H is an ideal solution for applications requiring reliable and cost-effective switching components.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES2AA-13-F | Diodes Incor... | -- | 55000 | DIODE GEN PURP 50V 2A SMA... |
ES2A-E3/52T | Vishay Semic... | 0.15 $ | 750 | DIODE GEN PURP 50V 2A DO2... |
ES2AHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AHE3_A/H | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA R3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-LTP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AAHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-E3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AHM3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A | ON Semicondu... | -- | 3000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AAHR3G | Taiwan Semic... | 0.08 $ | 3600 | DIODE GEN PURP 50V 2A DO2... |
ES2A M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2AA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A SMA... |
ES2AHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-13-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 50V 2A SMB... |
ES2AHE3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A SMB... |
ES2AHE3_A/I | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
ES2A R5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
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