Allicdata Part #: | ES3AFSTR-ND |
Manufacturer Part#: |
ES3A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 50V 3A SMC |
More Detail: | Diode Standard 50V 3A Surface Mount SMC (DO-214AB) |
DataSheet: | ES3A Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | SMC (DO-214AB) |
Operating Temperature - Junction: | -50°C ~ 150°C |
Base Part Number: | ES3A |
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ES3A Application Field and Working Principle
The ES3A is a signal rectifying diode which is suitable for digital, relay and general signal recognition purposes. This signal rectifying serves to convert AC signals into DC signals with its working principle based on semiconductor physics.
Applications Field
The ES3A is applicable in many different fields such as amplifier circuits, telecommunication systems, aerospace applications, microwave communication systems, or any circuit that requires gating, buffering and frequency detection. Furthermore, their most common applications include radio frequency receiver frequency conversion, automatic gain control circuits, power regulator fields, power diodes, etc. The ES3A can also be seen in low-noise amplifiers, back-termination loads and DC power supply.
Design and Working Principle
The ES3A rectifying diode features a symmetrical design and operates with a forward current range of up to 0.6A and a reverse current range of up to 20mA. The diode’s design incorporates a silver-alloy dielectric which acts as an insulation layer between the diode’s positive and negative polarities. The diode also offers a maximum reverse voltage rating of 1000V and a maximum peak forward voltage rating of 0.7V. This ensures the ES3A rectifying diode is suitable for a variety of applications.
The internal construction of the ES3A is made up of four layers: N-type semiconductor layer, a P-type semiconductor layer, and two metal layers which act as a contact plate. These four layers form a vacuum channel which allows for current and voltage flow. When the diode is forward biased, the two metal contact plates are brought together and connect to the P-type semiconductor layer, thus allowing the current to flow through the diode. When the diode is reverse biased, the two metal contact plates are pushed away from each other and made to connect to the N-type semiconductor layer, thus blocking any current from passing through.
In summary, the ES3A rectifying diode is applicable in many fields and its symmetrical design, operating current range, and maximum reversed and forward voltage ratings make it suitable for applications such as amplifiers, low-noise amplifiers, telecommunication systems, or any circuit requiring buffering, controlling and frequency detection.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES3A | ON Semicondu... | -- | 6000 | DIODE GEN PURP 50V 3A SMC... |
ES3AB-13-F | Diodes Incor... | -- | 42000 | DIODE GEN PURP 50V 3A SMB... |
ES3A-M3/57T | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-E3/9AT | Vishay Semic... | 0.14 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3_A/I | Vishay Semic... | 0.2 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3_A/H | Vishay Semic... | 0.22 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-13-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 50V 3A SMC... |
ES3A-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-M3/9AT | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A SMC... |
ES3AB-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A SMB... |
ES3A-E3/51T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
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