Allicdata Part #: | ES3AHE3_A/H-ND |
Manufacturer Part#: |
ES3AHE3_A/H |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 3A DO214AB |
More Detail: | Diode Standard 50V 3A Surface Mount DO-214AB (SMC) |
DataSheet: | ES3AHE3_A/H Datasheet/PDF |
Quantity: | 1000 |
1700 +: | $ 0.19580 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES3A |
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ES3AHE3_A/H Diodes - Rectifiers - Single
ES3AHE3_A/H is a single diode rectifier suitable for many applications. It is designed to have a power dissipation of up to 20 Watts, a forward current of 5A and a reverse voltage of 150V. The device is suitable for a variety of power needs, including power over Ethernet (PoE) applications, and is also very efficient. The device is also hot-swappable, allowing for quick and easy replacement or installation.
The device is an optimal solution for powering Ethernet and other communication links as it includes components such as an ESD diode, ESD diodes and an ESD snubber that protects the connection from electrostatic discharge. The device also features a low power dissipation, power factor correction and a low voltage drop, making it a suitable choice for powering industrial and chemical applications.
The working principle of a single diode rectifier is simple. It operates by allowing current to flow in one direction only, from positive to negative. The device consists of an anode and a cathode, which are connected to a voltage source. When a voltage is applied with the anode being positive and the cathode being negative, current can flow through the diode. This reduces the forward voltage drop of the device, allowing it to be very efficient in its operation.
In terms of applications, the ES3AHE3_A/H device is mainly used in PoE applications. PoE is an Ethernet system that enables power to be supplied to end nodes through the same cable that transmits data. The device is also employed in other applications such as renewable energy, data communications, and control systems. The device\'s low-power dissipation and high efficiency make it ideal for powering industrial machines, scientific instrumentation, and telecommunications applications.
The ES3AHE3_A/H diode is also employed in the automotive industry, specifically in controlling linear actuators for power seat adjustment. The device is also used in high-precision motion control applications such as electric vehicles. This device is also used in automotive switching and stabilizing circuits as well as in motor drives.
The ES3AHE3_A/H diode is a versatile device that can be employed in a wide range of applications. It offers excellent performance due to its low forward voltage drop, low power dissipation, high efficiency, and heat dissipation capabilities. It is a safe, reliable and cost-effective solution for many types of applications. With its ability to quickly and easily handle high power demand applications, it is well-suited for powering critical and industrial machines.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES3A | ON Semicondu... | -- | 6000 | DIODE GEN PURP 50V 3A SMC... |
ES3AB-13-F | Diodes Incor... | -- | 42000 | DIODE GEN PURP 50V 3A SMB... |
ES3A-M3/57T | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-E3/9AT | Vishay Semic... | 0.14 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3_A/I | Vishay Semic... | 0.2 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3_A/H | Vishay Semic... | 0.22 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-13-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 50V 3A SMC... |
ES3A-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-M3/9AT | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A SMC... |
ES3AB-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A SMB... |
ES3A-E3/51T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
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