Allicdata Part #: | ES3AHE3/57T-ND |
Manufacturer Part#: |
ES3AHE3/57T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 3A DO214AB |
More Detail: | Diode Standard 50V 3A Surface Mount DO-214AB (SMC) |
DataSheet: | ES3AHE3/57T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES3A |
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The ES3AHE3/57T diode is a single, general-purpose rectifier designed to provide fast switching and high efficiency in a variety of applications. This device uses a combination of Schottky barrier and high-efficiency rectifier die construction, offering low forward voltage drop and fast switching times. Its low leakage current performance and high surge current capability make it suitable for a variety of DC/DC conversion, switchmode power supply and other power applications.
The ES3AHE3/57T is a single-phase general-purpose rectifier with a 120V device breakdown voltage rating and a maximum repetitive forward voltage of 10.5V. The device features a high junction temperature rating of 175°C, a low reverse leakage current of 20mA, and a high surge current rating of 4A. The device’s forward voltage drop is very low (1.5V at 25A and 2.5V at 32A) providing higher efficiency for improved system power performance. The device also features a fast switching speed of 100nS for minimal switching losses.
In addition, the ES3AHE3/57T features a wide operating temperature range from -55°C to +125°C, providing enhanced reliability in a variety of environmental conditions. Its cost-effective package and design make it ideal for use in a variety of consumer and industrial device applications, including personal computers and gaming consoles, lighting and appliance control, automotive electronics, power switching, and audio/video applications.
The working principle of the ES3AHE3/57T diode is based on the combination of Schottky barrier-based rectification and high-efficiency rectification. This combination helps to improve its overall rectification efficiency while providing fast switching and low reverse leakage current. The device utilizes a Schottky barrier dielectric layer between the anode and cathode of the device which reduces the forward drop voltage and improves operating efficiency compared to a standard single rectifier. In addition, the device features a high junction temperature rating of 175°C, making it suitable for applications with high thermal cycling requirements. Finally, its high surge current rating of 4A ensures that it can handle transient events, such as power surges and short circuits, with ease.
In conclusion, the ES3AHE3/57T provides an economical, high-efficiency rectification solution for applications requiring fast switching times, low forward drop voltage and high surge current ratings. Its wide operating temperature range and cost-effective design make it ideal for consumer and industrial device applications. Furthermore, the combination of Schottky barrier-based rectification and high-efficiency rectification make it the perfect choice for applications such as power switching, lighting and appliance control, automotive electronics and audio/video applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES3A | ON Semicondu... | -- | 6000 | DIODE GEN PURP 50V 3A SMC... |
ES3AB-13-F | Diodes Incor... | -- | 42000 | DIODE GEN PURP 50V 3A SMB... |
ES3A-M3/57T | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-E3/9AT | Vishay Semic... | 0.14 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3_A/I | Vishay Semic... | 0.2 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3_A/H | Vishay Semic... | 0.22 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-13-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 50V 3A SMC... |
ES3A-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-M3/9AT | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A SMC... |
ES3AB-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A SMB... |
ES3A-E3/51T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
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