Allicdata Part #: | ES3AHE3_A/I-ND |
Manufacturer Part#: |
ES3AHE3_A/I |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 3A DO214AB |
More Detail: | Diode Standard 50V 3A Surface Mount DO-214AB (SMC) |
DataSheet: | ES3AHE3_A/I Datasheet/PDF |
Quantity: | 1000 |
3500 +: | $ 0.17745 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES3A |
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The diode is a fundamental electronic component with a variety of applications in circuits. Among these is the ability to conduct current in one direction while blocking it in the opposite direction. The single diode is the simplest of several types of diodes, providing these basic properties and enabling complex and sophisticated circuits. In this article, we will discuss the application field and working principle of the ES3AHE3_A/I single diode.
The ES3AHE3_A/I single diode is a popular choice for a variety of applications in which its electrical characteristics are beneficial. Military and aerospace applications, for example, benefit from the diode\'s ability to handle large current, high voltage, and high temperature. It is also used in medical equipment, as well as in telecommunications, nuclear power, and other specialized electronics. Its small size and weight make it ideal for sensor, instrumentation, and automatic control applications.
The ES3AHE3_A/I single diode has several components that enable its operation. These include the diode body, contacts, and a control gate. The diode body is composed of either indium phosphide or gallium arsenide, which have a low resistance to electric current. The contacts on the diode allow current to pass in one direction only, while blocking it in the other direction. The control gate is used to control the current flow. This can be regulated manually or automatically, depending on the application.
The ES3AHE3_A/I single diode works by passing current in one direction and blocking current in the opposite direction. This is achieved by the concentration of a P-type or N-type semiconductor. When a voltage is applied across the P-type semiconductor, it will become more conductive in the direction to the positive terminal, allowing current to pass. In the opposite direction, the N-type semiconductor will become less conductive, blocking current from passing. This is referred to as a Diode\'s forward biased condition. In reverse biased condition, the diode won\'t allow any current to pass, regardless of the applied voltage.
The ES3AHE3_A/I single diode can also be used to generate power in certain circuits. This can be done by harnessing the voltage that is generated when a current passes through the diode. The process is known as the diode\'s capacitive bridging effect, which enables the diode to store more electrons on one side than the other. This creates an imbalance, which can then be used to power certain components.
The ES3AHE3_A/I single diode also has the ability to amplify or reduce voltage. This is known as the diode\'s forward voltage drop. The forward voltage drop of the diode will depend on its operating temperature, as well as its capacitance. As the operating temperature increases, the forward voltage drop decreases, which allows for higher voltage amplification ratios.
In summary, the ES3AHE3_A/I single diode is a versatile component with a wide range of applications. It is used in military, aerospace, medical, and telecommunications applications and is ideal for sensor, instrumentation, and voltage-controlled circuits. The diode\'s properties ensure it can conduct current in one direction while blocking it in the other, and also generate power, amplify voltage and reduce voltage.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES3A | ON Semicondu... | -- | 6000 | DIODE GEN PURP 50V 3A SMC... |
ES3AB-13-F | Diodes Incor... | -- | 42000 | DIODE GEN PURP 50V 3A SMB... |
ES3A-M3/57T | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-E3/9AT | Vishay Semic... | 0.14 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3_A/I | Vishay Semic... | 0.2 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3_A/H | Vishay Semic... | 0.22 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-13-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 50V 3A SMC... |
ES3A-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-M3/9AT | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A SMC... |
ES3AB-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A SMB... |
ES3A-E3/51T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
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