Allicdata Part #: | ES3AHR7G-ND |
Manufacturer Part#: |
ES3AHR7G |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 3A DO214AB |
More Detail: | Diode Standard 50V 3A Surface Mount DO-214AB (SMC) |
DataSheet: | ES3AHR7G Datasheet/PDF |
Quantity: | 1000 |
3400 +: | $ 0.10018 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are an essential component found in many electronic applications, and rectifiers are a type of diode that is used to convert alternating current (AC) to direct current (DC). Single rectifiers are used to convert AC power to unidirectional, typically DC power suitable for many types of power electronics applications. The ES3AHR7G rectifier diode is a single component device often used for power conditioning and conversion purposes.
The ES3AHR7G is a standard rectifier diode offering improved performance, reliability, and power capabilities over many other standard rectifiers. The ES3AHR7G operates at either a forward-biased voltage (VF) of up to 1.2V or a reverse-biased voltage (VR) of up to 60V and has a maximum dc reverse surge current (IRRM) of 100A. It is typically used in AC/DC power conversion circuits, and can additionally be used in other power conditioning applications including voltage limiters, freewheeling diodes, and polarity protection.
The ES3AHR7G rectifier diode is well suited for both industrial and commercial applications due to its advanced performance capabilities. Its standard 50 ns recovery time allows it to switch power quickly, while its low reverse leakage current rating gives it superior thermal performance and power efficiency. Additionally, its reduced forward voltage dedicates more available power for use in the device, making it an ideal choice for applications with high power requirements.
The ES3AHR7G rectifier diode uses p-n junction semiconductor technology to control current flow. The junction comprises of two regions, an n-type semiconductor and a p-type semiconductor. In forward biased mode, the p-type layer has a negative potential (VF) and the n-type layer has a positive potential, allowing for current to flow through the junction (from p to n). In reverse biased mode, the p-type layer has a positive potential (VR) and the n-type layer has a negative potential, producing a voltage drop (or “barrier”) at the junction preventing current from flowing through the diode.
The ES3AHR7G can be used in a variety of industrial and commercial applications. It is common to find an ES3AHR7G rectifier diode in power electronics applications such as motor control, power conversion, and UPSs. It is also widely used in automotive, home appliance, and communications applications, including power supplies, battery chargers, and switching circuits.
In summary, the ES3AHR7G rectifier diode is a single component device used in AC/DC power conversion applications. It provides improved reliability, power efficiency, and overall performance over other standard rectifiers. Its p-n junction technology allows it to control current flow in either forward or reverse bias modes. The ES3AHR7G can be used in a variety of industrial and commercial applications, including automotive, home appliance, communication, and power electronics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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ES3A | ON Semicondu... | -- | 6000 | DIODE GEN PURP 50V 3A SMC... |
ES3AB-13-F | Diodes Incor... | -- | 42000 | DIODE GEN PURP 50V 3A SMB... |
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ES3A-E3/9AT | Vishay Semic... | 0.14 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
ES3AHE3_A/I | Vishay Semic... | 0.2 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
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ES3A-13-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 50V 3A SMC... |
ES3A-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
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