FAN7392M

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FAN7392M is an advanced gate driver for use in applications such as motor drives, converters and high-voltage power supplies. It is a sophisticated device that supplies a considerable amount of current to drive a MOSFET or IGBT, enabling fast switching and freeing the application processor from providing this function.

FAN7392M belongs to PMIC (Power Management Integrated Circuit) gate drivers category, which is used to control the on/off state of power transistors, such as MOSFETs and IGBTs. Such gate drivers are designed to provide fast switching times and to reduce power losses during the switching process.

The FAN7392M is designed to drive two N-channel MOSFETs (to connect them to the switch will result in an H-bridge configuration), with peak output current of 5 A, and a maximum output source/sink current of ±3 A. It has a quiescent power consumption of only 7 mW, when all outputs are enabled, making it very efficient in term of power consumption.

The FAN7392M is a highly integrated device with a package size of 14x13x2.7 mm. It comes with several functions and features to enhance system performance:

• A fault detection for over-current and over-temperature, both capable of interrupting externally via an open-drain output.
• An internal charge pump, generating high side voltages.
• Integrated pull-down resistors on both high and low-side.
• Different shutdown modes.
• Auto recovery features.
• Input logic signals compatible with 3.3V or 5V logic.
• Built-in bootstrap diode.
• Under-voltage lockout across the supply rails.

The device starts operating at a supply voltage V_CC1 and V_CC2 from 4.9V to 25V and can swap between outputs depending on the active/inactive state of the EN/EN2 pin. It also provides an open-drain shutdown output (active-low logic) for disabling the outputs under an undesired condition, such as an over-temperature event.

The FAN7392M follows the “totem pole” gate driver concept. This type of gate driver is the contemporary version of the classic gate driver circuit and the main advantage is the significant improvement on the motor dynamics range. This type of gate driver schematic includes an upper power transistor, usually an Enhancement-Mode (E-mode) MOSFET, and a lower power transistor, usually a Depletion-Mode (D-mode) MOSFET.

Using a totem pole gate driver circuit with two MOSFETs provides the advantage of improved switching times by latching the power supply current in the upper MOSFET. As soon as the upper MOSFET turns on, it starts latching to the power supply, providing more current to drive the lower MOSFET. This current can be several times greater than the current through the gate-source of the lower MOSFET, which reduces its switching time.

In the FAN7392M, each totem pole gate driver circuit has a N-channel MOSFET with a maximum V_GS of 30V and a R_DS of 0.18 ohms. The two high-side drivers are connected to two independent supplies, V_CC1 and V_CC2, providing a higher voltage swing between the two high-side MOSFETs to reduce switching losses. It also has an integrated charge pump for bootstrapped operation that can support peak currents up to 4A.

Moreover, the FAN7392M has different shutdown modes that allow the user to adjust the switching behaviour of the device. This feature is particularly useful when used in variable speed motor control systems, such as in applications such as brushless DC or stepper motors.

The FAN7392M belongs to PMIC gate drivers category and it is a highly-integrated device for motor drives and high-voltage power supplies. It is designed to support N-channel MOSFETs with peak output current of 5A and a maximum source/sink current of ±3 A. It is an efficient device with a quiescent power consumption of only 7 mW, when all outputs are enabled, and with an internal charge pump generating high side voltages. It has several features, like a fault detection, integrated pull-down resistors, different shutdown modes and a built-in bootstrap diode. Moreover, it follows the “totem pole” gate driver concept, which provides improved switching times by latching the power supply current in the upper MOSFET.

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