FB180SA10 Allicdata Electronics
Allicdata Part #:

FB180SA10-ND

Manufacturer Part#:

FB180SA10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: MOSFET N-CH 100V 180A SOT-227
More Detail: N-Channel 100V 180A (Tc) 480W (Tc) Chassis Mount S...
DataSheet: FB180SA10 datasheetFB180SA10 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 108A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
FET Feature: --
Power Dissipation (Max): 480W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Description

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FB180SA10 is a high voltage N-Channel enhancement mode MOSFET in a TO-220 package. It is an extremely versatile device, applicable to high voltage and high current load switch applications. With its fast switching speed and low on-resistance, it can handle switching of high power AC or DC loads at frequencies above 300KHz. The device has several advantages such as low gate charge, low input capacitance and low power losses.

The FB180SA10 is a single polarised N-Channel MOSFET which works on the principle of voltage being applied to the gate terminal of the transistor, to form a p-n junction and allow current to flow in the output circuit. The device will switch as soon as a voltage higher than the threshold voltage (VTH) is applied to the gate. With the Vth being a negative voltage and the gate bias being positive, the MOSFET is normally in its off state. To turn the device on, a voltage equal to or higher than the Vth must be applied to the gate terminal.

This device has several features, making it ideal for power switching applications. The low gate-source capacitance of the device, combined with its high input impedance, allows for smoother and faster switching of loads. Additionally, it can handle high-current loads, making it suitable for high-power applications. The device also features low input capacitance, which helps limit power losses and low gate charge, providing a better efficiency.

The device is mainly used in load switch applications and is suitable for high power AC and DC loadswitches, making it an ideal device for applications where high power is needed. It is also useful in DC-DC converters, motor drives and other high power circuits which need smooth and weighted control. In addition, the device can be used for high-power switching of DC motors, solenoids and other inductive loads.

The FB180SA10 is also an excellent device for digital power control and can be used to switch power on and off on demand, providing a regulated supply to the load. The device also offers a wide operating temperature range, making it suitable for use in a variety of applications. All these advantages make the FB180SA10 an ideal choice for applications where high load switching and control is required.

In conclusion, the FB180SA10 is a high voltage N-channel MOSFET with fast switching speeds, low on-resistance, low gate charge and low input capacitance. It is a versatile device, suitable for high-power AC and DC loadswitches, DC-DC converters, motor drives, power control and other high power circuits. With its wide operating temperature range and many features, it is an excellent choice for applications requiring high power and/or fast switching.

The specific data is subject to PDF, and the above content is for reference

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