FCA16N60 Allicdata Electronics
Allicdata Part #:

FCA16N60-ND

Manufacturer Part#:

FCA16N60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 16A TO-3P
More Detail: N-Channel 600V 16A (Tc) 167W (Tc) Through Hole TO-...
DataSheet: FCA16N60 datasheetFCA16N60 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 167W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: SuperFET™
Rds On (Max) @ Id, Vgs: 260 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FCA16N60 is a three-terminal Field Effect Transistor (FET) that operates in the enhancement mode. It is produced using Mircochip Technology’s The Advanced Low-Voltage high-current platform, tailored for electrical equipment such as PCs, laptops and tablets. The FCA16N60 is built especially for applications requiring minimal power consumption, and is available in the small form factor known as the TO-92 package.

In terms of features, the FCA16N60 has a low ON resistance and is capable of handling high currents, with a maximum continuous drain current rating of 16A, and a maximum drain-source voltage rating of 60V. It is also ESD protected up to values of ±8kV(HBM) for drain-source, drain-gate and source-gate interfaces. Thanks to its superior operating parameters and advanced technology, the FCA16N60 is the perfect choice for today’s fast-paced and ever-changing consumer demands.

The FCA16N60 is designed as a power MOSFET and is mainly used in various applications such as switching regulators, motor control and DC-DC converters. The Power MOSFET’s basic operation is based on the principle of an insulated gate field effect, coupled with the majority charge carrier injection to control current flow in an external circuit. The MOSFET’s gate is controlled by a small amount of current, which allows the electronic device to handle a high current of up to 16A and enables faster switching than traditional metal oxide field effect transistors (MOSFETs).

In addition, the FCA16N60 can operate at high speeds and enable fast switching, due to the presence of a low gate threshold voltage and a low gate capacitance. The fast switching of the device gives rise to a wide range of benefits including reduced power dissipation, improved efficiency and response time, and eliminated overshoot. Furthermore, the device can be used in switching applications that involve switching higher voltages.

The FCA16N60 is highly reliable, with a maximum thermal resistance of 2.2°C/W and a maximum power dissipation of 33W. As a result, the device can handle higher power levels and can provide enhanced reliability and performance in various applications. It is also highly resistant to electrical stresses and voltages and supports a wide range of advanced protection features for superior safety.

In addition, the FCA16N60 has several other advantages, including low drain-source ON resistance, low levels of gate charge and low gate-source capacitance. These features make it an excellent choice for high-current, high frequency applications and provide superior performance in terms of efficiency and power savings.

Overall, the FCA16N60 offers exceptional performance in a variety of applications and improves the reliability and performance of electronic equipment. It is highly reliable, efficient, and is capable of handling high currents and switching higher voltages. Thanks to its advanced features, low power consumption, and low gate charge, the FCA16N60 is the perfect choice for today’s always-evolving consumer needs.

The specific data is subject to PDF, and the above content is for reference

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