FCA36N60NF Allicdata Electronics
Allicdata Part #:

FCA36N60NF-ND

Manufacturer Part#:

FCA36N60NF

Price: $ 8.81
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 34.9A TO3PN
More Detail: N-Channel 600V 34.9A (Tc) 312W (Tc) Through Hole T...
DataSheet: FCA36N60NF datasheetFCA36N60NF Datasheet/PDF
Quantity: 405
1 +: $ 8.80740
10 +: $ 8.54318
100 +: $ 8.36703
1000 +: $ 8.19088
10000 +: $ 7.92666
Stock 405Can Ship Immediately
$ 8.81
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 312W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4245pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Series: FRFET®, SuperFET® II
Rds On (Max) @ Id, Vgs: 95 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCA36N60NF is a high voltage n-channel enhancement-mode Field-Effect Transistor (FET) with a maximum drain current rating of 61.0A. It is constructed using an advanced process to provide excellent on-resistance, breakdown voltage and maximum ratings.

The FCA36N60NF is designed for use in switchmode power supplies, motor controls, UPS systems, general purpose power switching circuits, lighting control and various amplifying purposes. It boasts a drain voltage rating of 600V and a gate charge rating of 182nC.

Application Field

The FCA36N60NF is designed for use in power electronic applications where an N-MOSFET is required for high voltage, high current switching and control. It is suitable for a variety of applications, including power switching and amplification. Common applications include high power switchmode power supplies, motor controls, UPS systems, HVAC systems, general purpose power switching circuits, lighting control, and various amplifier applications.

Working Principle

The FCA36N60NF is an N-MOSFET that operates using the principle of field effect. To operate this high voltage FET device, there is a voltage applied to the gate electrode (Source terminal) relative to the source terminal (Drain terminal). When this gate voltage is greater than the threshold voltage, the N-MOSFET is turned on and allows electrical current to flow from the drain terminal to the source terminal. This is how the transistor amplifies signals.

The on-resistance of the FCA36N60NF is determined by the gate voltage connected to the N-MOSFET. The higher the gate voltage, the lower the on-resistance of the device and the greater the current the transistor can handle. The FCA36N60NF is capable of providing operating frequencies above 100kHz, enabling a faster switching time and higher efficiency.

The maximum drain-source breakdown voltage rating of the FCA36N60NF is 600V, allowing for higher voltage power supplies and higher power levels. Additionally, the device has a very low figures of merit, making it highly favored for high power output. The FCA36N60NF is designed to provide superior performance in various switchmode power electronics applications.

The FCA36N60NF is designed to provide excellent on-resistance, breakdown voltage and maximum ratings for a variety of power electronics applications. It is an excellent choice for high power output, high frequency switching, and high voltage applications due to its superior on-resistance, low gate charge and maximum ratings.

The specific data is subject to PDF, and the above content is for reference

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