FCA76N60N

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FCA76N60N is an N-channel MOSFET transistor, usually used in power electronics applications. It is an efficient power switch due to its low ON resistance, high energy efficiency and high speed switching characteristics. It is suitable for various types of power supplies, motor drives, and other power management applications.

This MOSFET transistor is composed of a number of components including a power terminal, a gate terminal, a body terminal, and a source terminal. The power terminal is connected to the source terminal and acts as the power connection to the power supply. The body terminal is connected to the source terminal and acts as the base connection for the MOSFET. The gate terminal is connected to the source terminal and acts as the control input channel for the MOSFET. The three terminals are all necessary components in order to obtain the desired operation.

The FCA76N60N is an N-channel MOSFET with a low drain-source ON resistance of 4.5 ohms. It has an active voltage range of 20V and a maximum current rating of 60A. With an operating temperature range of -55°C to 175°C, the FCA76N60N is perfect for high temperature applications such as motor control, reverse battery protection and more.

The working principle of the FCA76N60N is based on the principle of two-terminal MOSFET switching, which means that the device switches from one state to another when voltage is applied to the gate terminal. The two states are the ON state and the OFF state, where the on state is the active state, and the off state is the inactive state. When the gate voltage is applied to the source voltage, the source voltage triggers the FET and turns it on, allowing the drain-source current to flow through the transistor. This causes the current to move in one direction, and the output is the voltage value, which can be used as the desired voltage to be supplied to a load.

The FCA76N60N can be used in a variety of applications that require power management solutions. It can be used in power supply circuits, motor drives, reverse polarity protection, DC-DC voltage converters and more. The device is also compatible with higher voltages, and can operate at 25V or higher.

In addition, the FCA76N60N features an enhanced avalanche breakdown capability for better over current protection, as well as an improved body diode recovery time, providing better ESD protection. The device also offers a low gate threshold voltage and low gate charge, making it suitable for high-frequency switching applications.

Overall, the FCA76N60N is a high quality, efficient, and reliable N-channel MOSFET transistor used for power electronics applications. It is capable of operating under high temperature conditions, and is perfect for a variety of power management solutions. With its low ON resistance, high energy efficiency, and high speed switching characteristics, the FCA76N60N is an impressive power component.

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