FCB11N60TM Discrete Semiconductor Products |
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Allicdata Part #: | FCB11N60TMTR-ND |
Manufacturer Part#: |
FCB11N60TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 11A D2PAK |
More Detail: | N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount D²... |
DataSheet: | FCB11N60TM Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Base Part Number: | FCB11N60 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1490pF @ 25V |
Vgs (Max): | ±30V |
Series: | SuperFET™ |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FCB11N60TM is a type of Field Effect Transistor (FET) that utilizes an insulated gate to control the properties of a semiconductor channel as well as current flow. As a member of the N-Channel MOSFET family, it is designed for a variety of applications in such fields as power conditioning and control, in which the device is normally off and requires a signal to turn the device on.
The FCB11N60TM is a ready-to-use FET; it is a single-device package, containing all the necessary components, in a single module that is only 10mm by 10mm in size. Its slim profile and low power dissipation make it ideal for tight spaces, and its easy-to-use terminals ensure that it can be integrated into existing circuits with minimal effort.
The FCB11N60TM is ideal for a wide range of applications. It can be used in digital circuits to switch signals between different devices. It can also be used to control voltage across a circuit, such as when used in a power supply. Additionally, it can be used to control the current in a circuit, such as when used as an amplifier or for motor control. Furthermore, it can be used in portable electronic devices, such as cell phones, where it can be used as a switching device to turn off the power when not in use.
The working principle of the FCB11N60TM is based on the same principles as other FETs and MOSFETs. It consists of a gate and two terminals, one of which is the drain. The gate is insulated from the other terminal, the source, by a thin oxide film. When a small voltage is applied to the gate terminal, the oxide film is breached, allowing a current to flow from the source to the drain. The amount of current that can flow through the device is then determined by the voltage applied to the gate.
The FCB11N60TM offers a number of advantages for use in various applications. Because it is made from a relatively small amount of material, it can offer high efficiency; due to the low amount of gate capacitance, it can also offer low switching losses and fast switching times. Additionally, it features integrated protection features, such as over-current protection and over-voltage protection. Finally, due to its slim profile and easy-to-use terminals, it can be easily integrated into existing circuits with minimal effort.
Overall, the FCB11N60TM is a ready-to-use FET, ideal for a variety of applications in fields such as power conditioning and control. It utilizes an insulated gate to control the properties of a semiconductor channel as well as current flow, offering advantages such as high efficiency, low switching losses, fast switching times, and built-in protection features. With its slim profile and easy-to-use terminals, it can be easily integrated into existing circuits with minimal effort.
The specific data is subject to PDF, and the above content is for reference
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