Allicdata Part #: | FCB260N65S3-ND |
Manufacturer Part#: |
FCB260N65S3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 650V 260MOHM D2PAK |
More Detail: | N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount D²P... |
DataSheet: | FCB260N65S3 Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1010pF @ 400V |
Vgs (Max): | ±30V |
Series: | SuperFET® III |
Vgs(th) (Max) @ Id: | 4.5V @ 1.2mA |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The FCB260N65S3 is a Field Effect Transistor (FET) MOSFET with a single configuration. FETs, MOSFETs, and their single configurations are widely used in a variety of circuit applications due to their low overall cost, ease of integration into designs, and superior variety of functions.
The FCB260N65S3 has a package size of 13.5mm and a nominal VDS of 260V. It has been built in as a power MOSFET, with a very low ON-resistance of 6.5mΩ and a maximum RDS(on) of 60A in a single configuration. A main feature of the FCB260N65S3 is the inclusion of a sense transistor which allows it to automatically adjust and self-regulate its own performance, such as in specific applications where the power device needs to operate less efficiently.
Because of its efficient design, robust output performance and superior device control, the FCB260N65S3 is suitable for a wide range of applications. These include both power-switching and audio applications. For example, this FET MOSFET can be used for DC-DC conversion, audio amplifiers, power mode switching, motor control and synchronous rectification, AC/DC conversion and battery management.
The FCB260N65S3 has two working modes. In the linear mode, the output voltage is varied depending on the Gate-to-Source voltage VGS and the drain-source resistance RDS. The device is designed to remain in the linear mode when the voltage through the Gate-to-Source is at its maximum.
In the switching mode, the direction of current flow is determined by the amount of current applied to the gate. When the amount of current is above a certain threshold, the transistor turns on, allowing current to flow and the voltage across the drain-source to increase. When the current applied to the gate is reduced, the FET MOSFET device turns off and the voltage across the drain-source is decreased.
In conclusion, the FCB260N65S3 is a Field Effect Transistor (FET) MOSFET with a single configuration which is highly suitable for a wide range of applications. This includes power switching and audio applications, as well as applications with self-regulating performance. It is also able to work in linear and switching modes.
The specific data is subject to PDF, and the above content is for reference
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