FCB36N60NTM

Gate Charge (Qg) (Max) @ Vgs:	112nC @ 10V
Base Part Number:	FCB36N60
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	312W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4785pF @ 100V
Vgs (Max):	±30V
Series:	SupreMOS™
Vgs(th) (Max) @ Id:	4V @ 250µA
Rds On (Max) @ Id, Vgs:	90 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The FCB36N60NTM is an easy-to-use and reliable state-of-the-art power Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET). It’s an N-Channel MOSFET that can be used as a power switch in many different types of applications. Most noteworthy is its low on-resistance and body-diode characteristics. This allows the FCB36N60NTM to have a great performance-to-cost ratio.

Application FieldFCB36N60NTM is a great choice for DC/DC converter, motor drive & control and audio applications. It has great operation in DC to DC converters, such as AC/DC converters, DC/DC converters, uninterruptible power supplies, and voltage regulators. DC/DC converters are used to convert power from one voltage level to another level. The FCB36N60NTM is also great for motor drives and control. It is ideal for smoke-triggered switches, solenoid actuators, and other applications that require high electrical and thermal stability. This MOSFET is also good for audio applications, such as guitar effects pedals and audio amplifiers, due to its low on-resistance and body-diode characteristics.

Working PrincipleThe basic structure of the FCB36N60NTM is a single N-Channel-MOSFET that is made of silicon, insulated from its gate by a thin oxide layer. The gate of the device is isolated from the n-type channel and the n+ source and drain regions. When a positive voltage is applied to the gate, an inversion layer is created in the channel region thereby allowing current to flow from the source to the drain. Two main factors control the on-state resistance or RDS(on): The width of the channel, and the gate-to-source voltage (VGS). If the VGS increases, the RDS(on) decreases up to a maximum. The RDS(on) is also inversely proportional to the width of the channel. The RDS(on) of the FCB36N60NTM is quite low compared to other similar devices. Semiconductor devices dissipate more power when in the “on” state than when in the “off” state. As a safety feature, the FCB36N60NTM has an advanced feature known as integrated body diode. The body diode limits the peak reverse voltage that can be applied to the device and helps protect it from damage.

ConclusionThe FCB36N60NTM is a great choice for DC/DC converters, motor drive & control and audio applications due to its low on-resistance and body-diode characteristics. It’s an N-Channel MOSFET that is easy to use and offers excellent performance-to-cost ratio. The on-state resistance of the device is controlled by the width of the channel and the gate-to-source voltage (VGS). Additionally, the integrated body diode provides a measure of safety, protecting the device from damage.

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