FCD1300N80Z Discrete Semiconductor Products |
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Allicdata Part #: | FCD1300N80ZTR-ND |
Manufacturer Part#: |
FCD1300N80Z |
Price: | $ 0.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 4A TO252 |
More Detail: | N-Channel 800V 4A (Tc) 52W (Tc) Surface Mount DPAK |
DataSheet: | FCD1300N80Z Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.52640 |
Vgs(th) (Max) @ Id: | 4.5V @ 400µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 880pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 1.3 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FCD1300N80ZMOSFET is an N-channel Enhancement-mode Vertical DMOS FET transistor that features two gate-drain isolation Zener barriers for more reliable operation. The FCD1300N80Zis built on a vertical double-diffused MOS (VDMOS) process and is used in a variety of applications, including motor drive circuits and power supplies.
FCD1300N80Z Application Field
The FCD1300N80Z is primarily used as a power switch in power supplies and motor drives. It can also be used in the high side switching circuits in electric heating systems, lighting systems, and industrial equipment. It is suitable for DC/DC converters, motor controllers, AC/DC motor drivers and high-current drive applications.
The FCD1300N80Z is capable of high power switching and provides enhanced current handling, better frequency response and improved EMI performance. This device offers excellent noise immunity and low power consumption, with a maximum on-state resistance of 364 mOhms. It has an easy to use single-gate operation and features an exposed source pin for more efficient heat spreading.
Working Principle of FCD1300N80Z
The FCD1300N80Z is an N-channel enhancement-mode Vertical DMOS FET transistor. The device has a double-diffused MOS (DMOS) process that enables higher power switching. It includes two gate-drain isolation Zener barriers, which help provide more reliable operation in high-current drive applications.
The FCD1300N80Z operates by applying a voltage to the gate terminal. This voltage increases the current flow between the source and drain terminals, allowing current to flow through the device. This device has an easy to use single gate operation, which eliminates the need for complex gate drive circuits. The FCD1300N80Z also has an exposed source pin that increases the thermal efficiency of the device.
The FCD1300N80Z has a maximum drain-source voltage of 800V and a maximum drain current of 15A. It is suitable for use in a wide range of applications, including motor controllers, AC/DC motor drives, high current switch applications, and power supplies. The device is capable of high power switching and provides improved efficiency, noise immunity and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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