FCD1300N80Z Allicdata Electronics

FCD1300N80Z Discrete Semiconductor Products

Allicdata Part #:

FCD1300N80ZTR-ND

Manufacturer Part#:

FCD1300N80Z

Price: $ 0.59
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 800V 4A TO252
More Detail: N-Channel 800V 4A (Tc) 52W (Tc) Surface Mount DPAK
DataSheet: FCD1300N80Z datasheetFCD1300N80Z Datasheet/PDF
Quantity: 1000
2500 +: $ 0.52640
Stock 1000Can Ship Immediately
$ 0.59
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Series: SuperFET® II
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FCD1300N80ZMOSFET is an N-channel Enhancement-mode Vertical DMOS FET transistor that features two gate-drain isolation Zener barriers for more reliable operation. The FCD1300N80Zis built on a vertical double-diffused MOS (VDMOS) process and is used in a variety of applications, including motor drive circuits and power supplies.

FCD1300N80Z Application Field

The FCD1300N80Z is primarily used as a power switch in power supplies and motor drives. It can also be used in the high side switching circuits in electric heating systems, lighting systems, and industrial equipment. It is suitable for DC/DC converters, motor controllers, AC/DC motor drivers and high-current drive applications.

The FCD1300N80Z is capable of high power switching and provides enhanced current handling, better frequency response and improved EMI performance. This device offers excellent noise immunity and low power consumption, with a maximum on-state resistance of 364 mOhms. It has an easy to use single-gate operation and features an exposed source pin for more efficient heat spreading.

Working Principle of FCD1300N80Z

The FCD1300N80Z is an N-channel enhancement-mode Vertical DMOS FET transistor. The device has a double-diffused MOS (DMOS) process that enables higher power switching. It includes two gate-drain isolation Zener barriers, which help provide more reliable operation in high-current drive applications.

The FCD1300N80Z operates by applying a voltage to the gate terminal. This voltage increases the current flow between the source and drain terminals, allowing current to flow through the device. This device has an easy to use single gate operation, which eliminates the need for complex gate drive circuits. The FCD1300N80Z also has an exposed source pin that increases the thermal efficiency of the device.

The FCD1300N80Z has a maximum drain-source voltage of 800V and a maximum drain current of 15A. It is suitable for use in a wide range of applications, including motor controllers, AC/DC motor drives, high current switch applications, and power supplies. The device is capable of high power switching and provides improved efficiency, noise immunity and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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