Allicdata Part #: | FCD5N60TMTR-ND |
Manufacturer Part#: |
FCD5N60TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 4.6A DPAK |
More Detail: | N-Channel 600V 4.6A (Tc) 54W (Tc) Surface Mount D-... |
DataSheet: | FCD5N60TM Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Base Part Number: | FCD5N60 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 54W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 25V |
Vgs (Max): | ±30V |
Series: | SuperFET™ |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 2.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FCD5N60TM is a device made from silicon, which is an advanced metal oxide semiconductor (MOS) field-effect transistor (FET) fabricated with CMOS technology. It is designed for applications that require high frequency, low power operation and low on-state resistance. It is suitable for switching and amplification in industrial, automotive, computer and communication equipment.
The FCD5N60TM consists of a single transistor with a source and a drain contact, as well as a gate contact, in between them. It is a normally-off device, meaning that at its normal state, no current flows within the transistor. To switch on the FCD5N60TM, a positive voltage is applied to its gate contact, which makes the connection between the source and the drain becomes conductive. This allows current to pass through between the source and the drain, which then switches the transistor to its on state. The process of turning on and off of the FCD5N60TM is controlled electronically by adjusting the voltage applied to the gate.
The FCD5N60TM has the ability to handle high frequency and low power requirements, so it is commonly used for switching and amplification applications. It can be used in circuits ranging from low frequency to high frequency, and from small power to large power. It is also highly efficient and energy-saving, with very low on-state resistance, meaning that it can switch rapidly and accurately. Additionally, it is highly reliable and has excellent thermal stability and low gate leakage current.
The FCD5N60TM has several advantages over other transistors. It has a wide range of operating voltage, from 0.25V to 40V, which makes it suitable for applications in different power levels. Its low on-state resistance also allows it to handle large currents with very low power consumption. Additionally, it has very low gate leakage current and high reliability, making it a very good choice for applications that need to be kept on constantly, such as in industrial, automotive, computer and communication equipment.
Overall, the FCD5N60TM is well suited for a wide range of applications, from low frequency to high frequency, small power to large power. Its superior performance and low on-state resistance make it an excellent choice for many types of circuits. Its flexibility, high reliability and power efficiency make it an ideal choice for automotive, computer and communication equipment. The FCD5N60TM’s ability to handle high frequency, low power requirements and provide low on-state resistance makes it a great device for switching and amplification applications. It is an excellent choice for any application that requires a reliable transistor with superior performance.
The specific data is subject to PDF, and the above content is for reference
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