FCD7N60TM-WS

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FCD7N60TM-WS is a kind of field-effect transistor (FET) from the Toshiba family. FETs are components used in various kinds of electronic circuits and systems, and FCD7N60TM-WS is suitable for a range of applications. This particular transistor\'s purpose can be best understood by looking at its applications field and its working principle.

FCD7N60TM-WS Application Field

FCD7N60TM-WS is a type of N-Channel MOSFET, classified as a MOSFET-C, or METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET). This transistor is useful in the application of power switch circuits. It can be an ideal choice for many kinds of switching power supplies, as well as other kinds of switch circuits requiring high-density, such as various kinds of volume control circuits.

More specifically, this FET can be used for motor control and brushless blower control, and is suitable for low on-resistance applications. It is also desirable for applications involving inductive loads, as it has a built-in fast-recovery diode to help mitigate the inductive voltage spikes that can occur during switching. This FET also offers a low drain-source on-resistance and high drain current switching capabilities.

The FCD7N60TM-WS is capable of switching up to 75V, and has a maximum drain-source current of 5A. Additionally, it has a maximum gate-source voltage of +-20V and a maximum gate-source capacitance of 396PF. This FET is offered in an extremely small DPAK package, perfect for space-constrained electronic circuits.

FCD7N60TM-WS Working Principle

The FCD7N60TM-WS is a four-terminal MOSFET, and its most important terminal is the gate, which is used to control the drain-source current by manipulating the field between the source and the drain. The gate is voltage-controlled and can be considered to be completely isolated from the rest of the circuit - that is, no current flows through the gate until the voltage on it is sufficient to turn the FET "on" or "off".

The basic principle of operation involves the manipulation of the field effect between the source and the drain. When the gate voltage is applied, an electric field is generated which induces an inversion layer in the region between the two terminals. This inversion layer has two properties - it allows the easy flow of electrons in one direction and restricts their flow in the other direction. This allows the MOSFET to function as an electronic switch, with low voltage and low current present at the source.

The FCD7N60TM-WS is a particularly robust and reliable FET, due to its low drain-source capacitance and its exceptionally low switching loss. Additionally, it is capable of operating at temperatures up to 150°C, making it suitable for a variety of high-temperature applications. It is also fast-recovery, meaning that it can switch very quickly, allowing it to be used for high current switching applications.

Conclusion

FCD7N60TM-WS is a MOSFET single-gate transistor which can be used in a variety of applications. It is suitable for power switch circuits and low on-resistance applications, as well as motor control and brushless blower control. Additionally, its robust design and reliability allow it to be used in high-temperature and high-current applications. Its working principle involves the manipulation of the field effect between the source and the drain, enabling efficient and fast switching.

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