FCD900N60Z Discrete Semiconductor Products

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The FCD900N60Z is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is manufactured by On Semiconductor through its Power Semiconductor Division. This type of MOSFET is specifically designed as a Type N-Channel Enhancement Mode type, and it is designed for applications that require high levels of power efficiency and performance. In this article, we will be discussing the application field and working principle of the FCD900N60Z.

Application field of FCD900N60Z

The FCD900N60Z is designed for high-voltage applications and has a current rating of 900 mA and a voltage rating of 600 V. This makes it well-suited for applications such as power supplies, motor controllers, radio frequency power amplifiers, and DC-DC converters. The FCD900N60Z is also well-suited for other high-voltage, low-power applications such as controlling switching and commutation in motor drives, and providing protection against over-voltage in consumer and industrial applications.

Working principle of FCD900N60Z

The FCD900N60Z is a type of high-voltage, low-power MOSFET that works by using enhancement-mode technology (rather than depletion-mode). This type of technology operates by allowing the transistors to turn on (or conduct) when a certain threshold voltage is applied to the gate of the transistor. This voltage is called the “enhancement voltage” and it’s the voltage that allows the transistor to become conducting. When the enhancement voltage is applied, a channel is created between the drain and the source of the transistor.

The FCD900N60Z is a type of transistor that is designed to operate at high voltages and low currents. This means that it is necessary to use this type of transistor when the current requirements of the system are high enough that the power losses due to the transistor’s resistance become too high. Furthermore, the FCD900N60Z has a low on-resistance due to its design (due to the fact that it’s specially designed for high-voltage, low-power applications). This low on-resistance allows for high efficiency in the system, as the power losses associated with the transistor become minimized.

In order for the FCD900N60Z to operate at maximum efficiency, it is necessary to properly size the transistor for the application. This means that the size of the transistor must match the power requirements of the application in order to ensure that the power losses associated with the transistor are minimized. The FCD900N60Z is specifically designed to operate at high voltages and low currents, so it should be carefully sized to meet the requirements of the application.

Conclusion

The FCD900N60Z is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is designed for high-voltage applications and is capable of withstanding currents of up to 900 mA. This makes it well-suited for use in applications such as power supplies, motor controllers, radio frequency power amplifiers, and DC-DC converters. It is designed to use enhancement-mode technology, which allows it to turn on when a certain threshold voltage is applied to its gate. Furthermore, it has a low on-resistance due to its design, which allows for high efficiency in the system. It is important to properly size the transistor for the application in order to ensure maximum efficiency.

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