| Allicdata Part #: | FCI25N60N-ND |
| Manufacturer Part#: |
FCI25N60N |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 25A I2PAK |
| More Detail: | N-Channel 600V 25A (Tc) 216W (Tc) Through Hole I2P... |
| DataSheet: |  FCI25N60N Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK (TO-262) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 216W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3352pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
| Series: | SupreMOS™ |
| Rds On (Max) @ Id, Vgs: | 125 mOhm @ 12.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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FCI25N60N is a type of N-Channel IGBT Power Transistor (Insulated-Gate Bipolar Transistor) that is used in a variety of applications. The product is capable of providing high power dissipation in a variety of applications, including switching and amplification. It is a versatile transistor that has a wide range of working principles, depending on the type of application.
In terms of operation, the FCI25N60N transistor is based on the typical IGBT architecture, where an N-Channel IGBT with its drain-source junction is connected to an isolated gate-source terminal. The gate is controlled by a voltage applied to the gate terminal. The voltage applied to the gate then controls the current between the drain and source terminals and thus, the power output of the transistor. The FCI25N60N transistor also contains internal gate resistors that control the gate voltage. The resistors allow the IGBT to manage the power losses due to switching and provide added protection to the device.
The FCI25N60N transistor is most commonly used in a variety of applications, such as switching and amplification, converters, motor control, and power management. Its versatile design makes it suitable for a variety of high-power applications, including those operating at high input voltages and currents. The included gate resistors further enhance the device’s performance, allowing it to handle high pulse current with minimal losses. The reliable performance of the device also makes it suitable for long-term applications.
The FCI25N60N transistor is an ideal solution for applications where high power dissipation is desired. It is suitable for applications where high pulse current is required, and its optional gate resistors allow it to provide higher safety and reliability for long-term applications. The device’s versatility and reliable performance make it an excellent choice for a variety of high-power applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FCI25N60N | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 25A I2PA... |
| FCI25N60N-F102 | ON Semicondu... | -- | 800 | MOSFET N-CH 600V 25A I2PA... |
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