FCP067N65S3

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The FCP067N65S3 is the latest addition to Fairchild Semiconductor’s field effect transistor (FET) range. It is a high-frequency, low-cost N-channel enhancement mode MOSFET. The part is optimized for low voltage, high-efficiency applications in high-frequency switching power supplies, high-speed data communications, CCFL lighting for LCD illumination, DC/DC converters and other applications.

The FCP067N65S3 is designed with a power MOSFET in a 3-pin plastic Local Interconnect Network (LIN) package with a TO-262 package. This FET is specially designed to minimize input and channel capacitance. It offers 500 mA continuous current and has a very low R_DS(on) of 0.67 ohms. Moreover, the device has a total gate charge of 8.7 nC and a maximum drain-source voltage of 65 V.

The FCP067N65S3 is a powerful and robust enhancement-mode MOSFET that can be used for various applications. This device is ideal for low voltage applications such as hard switching, high frequency switching and DC/DC converters. Its low R_DS(on) ensures maximum efficiency of the switch mode operation. Additionally, the device is optimized for high-fidelity power audio amplifier designs.

The FCP067N65S3 has a wide range of application fields. It is suitable for use as a switch in automotive applications such as lighting, motor control, and charging systems. It is also an ideal choice for power amplifiers, power supplies and electronic ballast applications. Furthermore, the FCP067N65S3 is switched in synchronization to the input waveform and is used in high power audio amplifiers.

The FCP067N65S3 works by controlling the flow of current through its two terminals, the drain and the source. When a voltage is applied to the gate, the transistor is partially or fully "on" in the so-called "enhancement mode". This allows current to flow from the source to the drain. When the gate voltage is decreased, the control of current is decreased and, eventually, the flow of current from the source to drain will stop.

The FCP067N65S3 is a high-performance N-channel MOSFET device. Its low R_DS(on) and low input capacitance minimize losses in the switching power supply and high-speed data communications applications. Its high-current capability and fast switching speed make it perfect for use in automotive and consumer applications. Its wide range of applications and easy-to-use LIN package make it an ideal choice for a wide range of applications.

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