
Allicdata Part #: | FCP099N60E-ND |
Manufacturer Part#: |
FCP099N60E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V TO220 |
More Detail: | N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 234 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 357W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3465pF @ 380V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Series: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 99 mOhm @ 18.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCP099N60E is a device most commonly used in applications specifically related to MOSFETs, or Metal–oxide–semiconductor field-effect transistors. It is a type of FET, or field-effect transistor, and is a single one at that. This means that it contains one transistor able to control the flow of current through it.
This device is a power MOSFET, meaning it is meant primarily for applications involving high-power electronics. It is a specific type, the N-channel enhancement type, and is able to control the current between its source and drain with the applied gate voltage. It is also presented as a monolithic integrated junction, or a three-terminal single device.
This device has several features that make it attractive for usage in applications like this. It has a continuous drain current rating of up to 99 amps, due to its high device conductance. It has a voltage threshold of 2.0 volts and a on-resistance of 0.117 ohms at 4.5 volts. It is capable of fast switching, which makes it ideal for electronic applications.
When using this device, it should be applied in a specific way and with specific accompanying components. The source and drain pins are the two terminals and the gate voltage, which controls the current, is the third. The source should be at the lower voltage, while the drain is at higher voltage and the gate should be at halfway between the two to ensure proper operation. It should also be used with an adequate heat sink to ensure that it runs properly.
In order to truly understand the FCP099N60E, its principles of operation need to be examined. Basically, this device is an enhancement-type MOSFET, which means that ever-increasing amounts of gate voltage will result in greater and greater current flow from the source to the drain. It works by creating an inversion layer, or a channel, at the surface of the device when a voltage is applied at the gate. This inversion layer acts as a conductor that allows electrons to flow, thus allowing current to flow from the source to the drain.
In the FCP099N60E\'s application, this device is primarily used for switching. When a voltage is applied to the gate, the current from the source to the drain begins to flow. Thus, the FCP099N60E is able to switch on and off current easily, making it ideal for applications in which controlling current flow is a requirement.
The FCP099N60E is a powerful device and an attractive choice for applications involving high-power electronics. Its ability to switch the current flow between its source and drain, along with its low on-resistance and fast switching capabilities, make it an ideal choice. When designing and building circuit components, it is important to understand exactly how the system works. By understanding the working principle and application field of the FCP099N60E, one can make an educated decision when choosing the appropriate device for the job.
The specific data is subject to PDF, and the above content is for reference
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