FCP4N60

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FCP4N60 is a fast field-effect transistor (FET) designed for use in high-voltage applications. It is a type of insulated-gate field effect transistor (IGFET), or metal-oxide-semiconductor field-effect transistor (MOSFET). FCP4N60 is built upon a deep-trench silicon structure and planned for tube-level replacement and parallel switching applications. The product\'s small footprint and low gate capacitance enables fast switching that has excellent on-state characteristics for low audible noise and jitter.

The FCP4N60 is a single-channel, N-channel MOSFET with a total gate charge of 4 nano-coulombs (nC). It features a low drain-source on-resistance of 5.6 ohms, and its output can support up to 200 volts and 8.2 amps. It has a maximum drain-source breakdown voltage (BVdss) of 200 volts and a gate-source threshold voltage of 3 volts. The maximum operating temperature range of the FCP4N60 is -55 °C to 125 °C with a storage temperature range of -55 °C to 150 °C.

The FCP4N60 is a fast switching device optimized for industrial and commercial applications. It is often found in high power switching circuits and power regulators, where its rapid switching speed, high current-handling capacity, and high breakdown voltage can be used to control load currents and voltages. It is also used in switching circuits for motor drivers, RF amplifiers, and audio amplifiers in consumer, home, and automotive electronics applications.

The FCP4N60 works on the principle of the insulated gate field effect transistor. This device is constructed from a solid-state semiconductor sandwich, with two layers of semiconductor material, one of which is an insulator, separating the other two devices. When a voltage is applied to the gate of the FCP4N60, a voltage is actually applied to the insulated gate, which in turn causes the transistor to "switch" on and off. The switching process occurs in such a way that it keeps the current flow consistent and controllable.

In an FCP4N60 circuit, the drain is used to pass the current, the source is used as the output of the circuit, and the gate is used to control the current level and manage the internal resistance. As the gate voltage is changed, the output resistance of the device is also changed. This allows the FCP4N60 to be used in applications in which the output current of a circuit needs to be managed or the input resistance of a circuit needs to be increased or reduced.

The FCP4N60 is a great choice for power management applications that require high-speed switching. It features low on-resistance and efficient operation with low gate charge and noise, making it suitable for a wide range of applications. Additionally, its small size and low gate capacitance make it a great option for high-density PCBs.

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