Allicdata Part #: | FCP600N65S3R0-ND |
Manufacturer Part#: |
FCP600N65S3R0 |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | SUPERFET3 650V TO220 PKG |
More Detail: | N-Channel 650V 6A (Tc) 54W (Tc) Through Hole TO-22... |
DataSheet: | FCP600N65S3R0 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.57819 |
Vgs(th) (Max) @ Id: | 4.5V @ 600µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 54W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 465pF @ 400V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | SuperFET® III |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCP600N65S3R0 is a field-effect transistor (FET) that belongs to the MOSFET group of FETs. It is a single device and is used in a wide range of applications. In this article, we discuss the application fields and the working principle of the FCP600N65S3R0.
Application Field
The FCP600N65S3R0 can be used in a variety of applications due to its wide operating range and low on-resistance. It is suitable for switching circuits, motor control drive circuits, protection circuits, and converter circuits. It is highly recommended for high-frequency switching applications.
The FCP600N65S3R0 is designed for high-speed switching in excess of 20MHz, making it an ideal choice for applications such as Class D audio amplification and high-speed data acquisition systems. It is able to handle current surges up to 295A, making it suitable for high-power motor control systems.
The FCP600N65S3R0 is also used in many industrial applications such as industrial automation, instrumentation, and power conversion. It is suitable for controlling power distribution and protection systems due to its low on-resistance and high maximum blocking voltage.
Working Principle
The FCP600N65S3R0 is a n-channel enhancement mode MOSFET, which means that it has an n-type gate and is normally non-conducting. In order to enable the device, a positive voltage must be applied to the gate. This will create an electric field which causes the n-type semiconductor material to become conducting, allowing current to flow through the device.
The FCP600N65S3R0 has a high input capacitance, which means that it can quickly switch from on to off even when subjected to high-frequency signals. This feature makes it ideal for high-speed switching applications such as Class D audio amplifiers and data acquisition systems.
The FCP600N65S3R0 also has a high drain-source breakdown voltage of 600V, which makes it suitable for handling higher voltages that are common in industrial and motor control systems. This device is also able to handle high current surges up to 295A, making it suitable for high-power applications such as motor control.
The FCP600N65S3R0 is also equipped with a heat sink to dissipate heat generated by the device. This ensures that the device remains cool and can handle high power without risk of damage.
Conclusion
The FCP600N65S3R0 is a versatile device that can be used in a variety of applications. It is equipped with features such as a high input capacitance, high drain-source breakdown voltage, and a heat sink, which make it suitable for high-frequency switching, high-power motor control systems, and other industrial applications.
The specific data is subject to PDF, and the above content is for reference
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