FCP9N60N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FCP9N60N is a form of field-effect transistor (FET) which can be used to build electronic circuits. It belongs to a specific type of FETs called Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs), which are also known as “ Insulated-gate field-effect transistors”. This type of FETs are particularly attractive for use in high-current and high-voltage applications due to their high input impedances, fast switching speeds, low power consumption and low noise levels. The FCP9N60N is a single n-channel enhancement-mode type of MOSFET and it is considered as one of the best transistors available today in terms of performance, especially with regard to its operating voltage, which is rated at sixty volts (60V).

The FCP9N60N is typically used in applications requiring precise control over the current and voltage, such as power converters, amplifiers, switching regulators and DC-DC inverters. It is also used in motor control circuits to control high currents and in signal conditioning applications where signal linearization is required. The FCP9N60N works by using an insulated gate to control the current flow between the source and the drain. When a voltage is applied to the gate, a electric field is generated which modulates the current flow between the source and the drain. The amount of current which can flow through the FCP9N60N can be controlled by varying the gate potential.

In order to understand how the FCP9N60N works, it is important to consider the FET’s fundamental operation. The FCP9N60N operates on the principle of minority carrier injection. When the gate voltage is less than the breakover voltage, no current can flow through the FET and the transistor is said to be in its ‘off’ state. On the other hand, when the gate voltage is greater than the breakover voltage, current can flow through the transistor and it is said to be in its ‘on’ state. By controlling the gate voltage, the current flow through the FET can be accurately modulated depending on the requirement.

In terms of its physical characteristics, the FCP9N60N comes in a variety of packages including TO-220 and SOP-8. It has an operating temperature range from -55C to 150C and the maximum channel-drain voltage it can handle is 60V. Moreover, when operating at a temperature of 25C, the FCP9N60N has a threshold voltage of 2.3V and a maximum drain current of 8A. These are some of the features that make the FCP9N60N a popular choice for high-current and high-voltage applications.

In conclusion, the FCP9N60N is an excellent choice for designers looking for a reliable and high-performing transistor for their applications. It belongs to the family of Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) and it is typically used in applications requiring precise control over the current and voltage. The FCP9N60N operates on the principle of minority carrier injection and it is available in various packages to suit different application requirements. With its high input impedances, fast switching speeds, low power consumption and low noise levels, the FCP9N60N is one of the best transistors currently on the market and is highly recommended for applications where accuracy, reliability and performance are critical factors.

The specific data is subject to PDF, and the above content is for reference