FCU2250N80Z

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FCU2250N80Z is a type of single MOSFET (memory-less metal oxide semiconductor field-effect transistor). This device is mainly used as power switches in many applications due to its attractive price and efficiency.

Understanding its application field requires one to have knowledge of its working principle. MOSFETs are voltage-controlled semiconductor components, which provides low power consumption and fast switching compared to bipolar transistors. The transistor is built upon a ‘channel’ formed in the p-type semiconductor region and is then covered by an insulated gate. With this, a voltage applied to the gate terminal can open or close the channel for current flow between the source and drain terminals.

FCU2250N80Z is a single-event device with a drain-source voltage of 50 V, and a gate-source voltage of ±20 V. It has low gate charge, low gate resistor and very high current capability for applications that require high power. The device can switch with a maximum drain current of 25A (pulse: 6A/μs) and a temperature range from -55°C to 175°C, its turn-on/off times are less than 30/50 ns respectively.

The device is also provided with a very robust load and thermal balance in order to make it safer against over-temperature and over-current events. It has no reverse current protection, so an external diode or resistor should be added to the circuit. An internal protection mechanism provides a low reverse current capability.

FCU2250N80Z is an example of a single MOSFET device that is used in many applications due to its attractive price, efficiency and robustness. Its ability to act as a switch with low power consumption and fast switching time makes it ideal for many power applications. The internal protection mechanism allows it to be safer against over-temperature and over-current events and its very low gate charge and drain-source voltage make it ideal for applications that require high power.

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