FCU4300N80Z Allicdata Electronics
Allicdata Part #:

FCU4300N80Z-ND

Manufacturer Part#:

FCU4300N80Z

Price: $ 0.98
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 800V 1.6A IPAK
More Detail: N-Channel 800V 1.6A (Tc) 27.8W (Tc) Through Hole I...
DataSheet: FCU4300N80Z datasheetFCU4300N80Z Datasheet/PDF
Quantity: 1638
1 +: $ 0.88830
10 +: $ 0.78813
100 +: $ 0.62301
500 +: $ 0.48317
1000 +: $ 0.38145
Stock 1638Can Ship Immediately
$ 0.98
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Series: SuperFET® II
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 800mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCU4300N80Z is a Field-Effect Transistor (FET) designed primarily for use in power supplies, motor control systems and other high-power applications. The FET is a three-terminal, uni-polar voltage-controlled semiconductor device consisting of an ohmic source and drain, a control gate and an isolated body. This FET is designed to operate from a wide range of voltage sources ranging from 4 to 80 V, making it suitable for a variety of applications.

One important feature of the FCU4300N80Z is its low on-resistance. This FET has an On-resistance of 0.35 Ω, which allows it to conduct current more efficiently. It also has a low gate-source capacitance of 13.5 pF, which makes it well-suited for high-frequency applications. Additionally, the FET has a high breakdown voltage of 125 V, allowing it to handle higher voltages than other FETs.

The FCU4300N80Z is a N-channel enhancement type MOSFET, which means that it operates by applying an electric field between the control gate and the source. When no voltage is applied to the gate, the FET is turned off, and no current can flow between the source and the drain. When a voltage is applied to the gate, an electric field is created which increases the resistance between the source and the drain, resulting in a controlled conduction of current. The magnitude of the current can be controlled by varying the gate voltage.

In addition to its power handling capabilities, the FCU4300N80Z also has a high avalanche voltage rating of 130 V. This makes it suitable for use in high-voltage applications such as polarity reversal circuits and power supplies. Furthermore, the FET has a low gate charge of 4.6 nC, which makes it much easier to switch on and off, allowing the FET to operate at high frequencies without significant losses.

The FCU4300N80Z is a versatile device which can be used in a variety of applications. In power supplies, motor control systems, and other high-power applications, it can be used to efficiently switch on and off circuits, allowing for precise control of power flow. This can result in significant improvements in efficiency and power savings. Additionally, the FET can also be used in high-voltage, high-frequency applications such as polarity reversal circuits and radio frequency amplifiers.

The FCU4300N80Z is a high-performance FET which is well-suited for a variety of applications. Its low on-resistance and high avalanche voltage rating, combined with its low gate charge, make it ideal for applications requiring precise control of power flow, as well as high-frequency switching. This versatility, along with its wide operating voltage range, makes it an excellent choice for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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