| Allicdata Part #: | FCU5N60TU-ND |
| Manufacturer Part#: |
FCU5N60TU |
| Price: | $ 0.74 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 4.6A I-PAK |
| More Detail: | N-Channel 600V 4.6A (Tc) 54W (Tc) Through Hole I-P... |
| DataSheet: |  FCU5N60TU Datasheet/PDF |
| Quantity: | 1000 |
| 5040 +: | $ 0.66137 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 54W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| Series: | SuperFET™ |
| Rds On (Max) @ Id, Vgs: | 950 mOhm @ 2.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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The FCU5N60TU is a planar N-channel power MOSFET device designed to operate with a high-efficiency in a wide range of applications. The device has a very low on-state resistance and an optimized switching performance, making it an ideal device for use in high-power switching circuits. It also features an integrated gate protection diode, making it suitable for applications where high safety and reliability are required.
The FCU5N60TU is a single-type MOSFET device, meaning that it consists of a single transistor, as opposed to a dual-type MOSFET device, which consists of two transistors. The device is composed of one N-type source, one N-type drain, one P-type substrate, and one P-type gate. The source, drain and gate regions are connected together using two metal gate electrodes, which form the channels between the source and drain regions. The gate is used to control the current flow within the device.
The working principle of the FCU5N60TU can be best understood by looking at the source-drain circuit. When the gate is positively charged, the device is in an “on” state, allowing current to flow between the source and drain. When the gate is negatively charged, the device is in an “off” state, meaning that no current can flow between the source and drain. The device can be operated in either the depletion or enhancement mode, depending on the operating conditions.
The FCU5N60TU is highly suitable for use in a number of different applications, such as power converters, inverters, motor control, DC-DC converters and other high-frequency switching applications. In these applications, the FCU5N60TU can be used to switch large currents with a very low on-state resistance, resulting in high efficiency and excellent performance. Additionally, the device’s integrated gate protection diode ensures high reliability and safety in applications where these properties are of utmost importance.
In conclusion, the FCU5N60TU is a single-type MOSFET device with a very low on-state resistance, making it an ideal choice for use in high-power switching circuits. The device has an integrated protection diode which ensures a high level of safety and reliability in applications where these properties are important. Additionally, the FCU5N60TU is suitable for use in a number of different applications, such as power converters, DC-DC converters, inverters, motor control and other high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FCU5N60TU | ON Semicondu... | 0.74 $ | 1000 | MOSFET N-CH 600V 4.6A I-P... |
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