Allicdata Part #: | FCU900N60Z-ND |
Manufacturer Part#: |
FCU900N60Z |
Price: | $ 1.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N CH 600V 4.5A IPAK |
More Detail: | N-Channel 600V 4.5A (Tc) 52W (Tc) Through Hole I-P... |
DataSheet: | FCU900N60Z Datasheet/PDF |
Quantity: | 1775 |
1 +: | $ 0.93870 |
10 +: | $ 0.83097 |
100 +: | $ 0.65678 |
500 +: | $ 0.50933 |
1000 +: | $ 0.40210 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 2.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FCU900N60Z are insulated gate bipolar transistors (IGBT), which combines MOSFETs and bipolar transistors (BJT). It is a voltage driven device i.e. it has the same input characteristics of a MOSFET and the same output characteristics of a Bipolar junction transistor. It has low on resistance and is reliable and robust with fast switching and of course, low power dissipation. This makes FCU900N60Z suitable for a wide range of high current DC, AC and pulse applications in switched mode power supplies, motor controls, welding and light dimming.
It has a voltage drop of 600V and has a fast & reliable switching under various loads. Furthermore, it also has a unique insulated package design which prevents cross conduction & current spiking that normally happens with BJTs. There are two main terminals i.e. emitter and collector. The emitter terminal is the input lead while the collector terminal is the output one and must be very well grounded. They also have a third terminal which is the gate, which controls the current flow through the device.
In terms of working principle, FCU900N60Z works similarly to other IGBT devices in that, a low current control signal at the gate allows the device to conduct high current between emitter and collector terminals. The device is considered to be in the ‘OFF’ state when its gate terminal is at a voltage of 0 to 4 volts and its resistance is therefore infinite. When the gate voltage is increased to a voltage of 0 to 4.5 volts, the device will start to conduct from the source to the drain and the resistance of the device decreases.
This decrease in resistance can be very abrupt; depending on the current that is entering the drain. As the gate voltage increases, the current through the device increases very rapidly until the device reaches the ‘saturation’ point; this is the point at which the device can conduct no further current. The device has a power rating of 500V and can safely handle current up to about 80A. Furthermore, it has a reverse voltage blocking behaviour, which prevents the current from flowing in an opposite direction between the terminals.
In conclusion, the FCU900N60Z is a powerful and reliable insulated gate bipolar transistor used for a variety of high current applications. It is robust, has a low power dissipation, low on resistance, insulated package design and fast switching behaviour. Its versatile design and reliable performance makes it perfect for a range of situations such as switched mode power supplies, motor controls, light dimming, and welding.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FCU900N60Z | ON Semicondu... | 1.04 $ | 1775 | MOSFET N CH 600V 4.5A IPA... |
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