FDA032N08

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3PN
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	375W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	15160pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	220nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	3.2 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The FDA032N08 is a single N-channel enhancement type MOSFET, designed for linear switching applications. It is designed to provide low on-state resistance and a wide range of drain currents. The high input impedance of the device makes it ideal for applications such as power switching, motor control, and other applications requiring high voltage and/or current. The N-channel enhancement type MOSFET, or also known as NMOS, is a type of FET (field effect transistor). The N-channel MOSFET is composed of a transistor that uses a gate controlling the channel in order to switch the device. The gate voltage controls the quantity of current that flows through the channel. When the gate voltage is low, the current flow is limited, and when the gate voltage is high, the current flow is greater. The FDA032N08 is a single N-channel MOSFET with a drain source voltage of 32V and a drain current of 8A. It also has a high input impedance of 16Ω, a low on-state resistance of 0.02Ω, and a maximum gatesource voltage of 20V. These characteristics make it suitable for use in a variety of applications such as motor control, power switching, and other applications requiring greater current or voltage.The FDA032N08’s working principle is relatively simple. When the gate voltage is low, the MOSFET is off, limiting the current flow through the channel. When the gate voltage is high, the current can flow freely through the channel. The device is designed so that the gate voltage controls the current flow through the channel, and thus can be used for switching applications. The FDA032N08 is a cost-effective MOSFET commonly used in a variety of linear switching applications. It provides a low on-state resistance and a wide range of drain currents, as well as a high input impedance. These characteristics make it suitable for use in applications such as motor control and power switching. The FDA032N08’s working principle is based on the principle of controlling the current flow through the channel via the gate voltage.

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