
Allicdata Part #: | FDB4020P-ND |
Manufacturer Part#: |
FDB4020P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 16A TO-263AB |
More Detail: | P-Channel 20V 16A (Ta) 37.5W (Tc) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Power Dissipation (Max): | 37.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 665pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDB4020P is an N-Channel Field Effect Transistor (FET) module. It is the N-channel enhancement-mode vertical DMOS FET module, designed for use in a wide variety of applications, including switching, motor control and load sensing. The FDB4020P has a gate-source breakdown voltage (Vgsbr) of 20V, a maximum gate-drain breakdown voltage (Vgdbr) of 40V, and a maximum junction temperature of 150 °C. The FDB4020P is manufactured using the latest technology, making it highly reliable and efficient.
The primary application field of the FDB4020P is motor control. Using the FDB4020P, it is possible to regulate the speed and direction of rotation of a motor, as well as the amount of voltage supplied to the motor. The FDB4020P has a fast switching speed and low ON-state resistance, making it ideal for high-efficiency motor control. It is also capable of efficiently controlling the load current and protecting the motor from overload or overvoltage conditions.
Another application field of the FDB4020P is load sensing. By using the FDB4020P, it is possible to detect the presence of a load and modify the voltage or current supply to the load according to the detected load. This can be used to ensure that the load is supplied with the correct amount of power and that no damage is done to it by over- or under-supply of voltage or current. Additionally, the FDB4020P can also be used to prevent excessive currents from flowing when multiple loads are connected in parallel.
The working principle of the FDB4020P is based on the field effect. When a positive voltage is applied to the gate of the FDB4020P, the Electron-Hole Pairs (EHPs) present in the N-type channel are attracted to the gate. This creates a depletion region between the gate and the channel, which serves to reduce the conductivity of the channel and results in an increase in the resistance of the FET module. When the voltage is removed from the gate, the EHPs are no longer attracted to the gate, allowing the channel to become conductive again and restoring its original state.
The FDB4020P is also used to control the switching of a load. When the FET is switched on, the gate-drain voltage across it increases and the N-type channel becomes conductive. This allows current to flow between the drain and the source, enabling the load to be switched on. When the FET is switched off, the gate-drain voltage decreases, and the N-type channel is no longer conductive, preventing current flow between the drain and source and switching the load off.
The FDB4020P is a highly efficient and reliable FET module, making it an ideal choice for a variety of applications. Its N-channel enhancement-mode vertical DMOS FET design makes it well suited for high-efficiency motor control, load sensing and switching applications. Additionally, its fast switching speed and low ON-state resistance make it an ideal choice for quick and efficient motor or load control.
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