FDB7030BL Allicdata Electronics
Allicdata Part #:

FDB7030BLTR-ND

Manufacturer Part#:

FDB7030BL

Price: $ 0.47
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 60A TO-263AB
More Detail: N-Channel 30V 60A (Ta) 60W (Tc) Surface Mount TO-2...
DataSheet: FDB7030BL datasheetFDB7030BL Datasheet/PDF
Quantity: 800
1 +: $ 0.47000
10 +: $ 0.45590
100 +: $ 0.44650
1000 +: $ 0.43710
10000 +: $ 0.42300
Stock 800Can Ship Immediately
$ 0.47
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDB7030BL is a 30 V N-channel MOSFET with a drain-source breakdown voltage of 70 V and an on-resistance of 2.6 mΩ. The device features a typical gate charge of 45 nC, allowing for very efficient switching, making it suitable for high frequency applications. Furthermore, the device provides high current ratings, up to 13 A. It is also supplied in a small and low-profile micro-package, ideal for size-constrained designs. This makes it well suited not just for high frequency switching applications, but also for applications requiring device miniaturization.

The fundamental operating principle of the FDB7030BL is based on the physical effect of the MOSFET’s channel forming a controlled low-resistance resistive path to the drain if the gate-source voltage (VGS) is large enough to exceed the gate threshold voltage. This is made possible by the thin gate dielectric placed between the source and gate. The gate is used to control the voltage and current supplied to the drain by manipulating the amount of current flowing through the channel.

A key benefit of the FDB7030BL is its versatile application field. Due to its high current capability, fast switching speed and small size, it can be used in a wide variety of applications. It’s particularly well suited to use in low-side switching systems, such as motor control and automotive lighting. Furthermore, it can be used in DC-DC converters, telecom systems, power supplies, and other high frequency applications such as DC motors.

The FDB7030BL also provides added benefits due to its low output capacitance and active Miller capacitance, resulting in reduced echo and ringing. This helps reduce the amount of electromagnetic interference (EMI) generated by the device, enabling it to meet both EMI safety requirements and provide added cost savings in terms of reduced noise. Additionally, its low on-resistance ensures minimal power loss, helping reduce its power consumption.

Finally, the FDB7030BL has a wide operating temperature range of -55 °C to +155 °C, allowing for its use in a wide range of operating environments. This helps to ensure that it is suitable for use in automotive and industrial applications, where robustness and reliability is required.

In summary, the FDB7030BL is a high performance N-channel MOSFET with a wide range of benefits, making it ideal for use in high current and high frequency applications, especially those requiring device miniaturization and robust operation. With its wide operating voltage and temperature range, low output capacitance, active Miller capacitance and low on-resistance, the FDB7030BL is an excellent choice for a wide range of switching and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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