FDB9406L-F085

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FDB9406L-F085 is an ultra low-RDS(ON)-capable N-channel power MOSFET. This device offers superior performance for a wide range of applications including motor control, load switching, power supply, and audio amplifier applications. The FDB9406L-F085 has a drain-to-source current rating of 24 A, making it ideal for situations where high power handling is necessary. It also features a low on-resistance of 0.07 Ω, ensuring that it can efficiently handle large currents with minimal loss.

The FDB9406L-F085 is a vertical double-diffused power MOSFET, which means that it has two distinct layers of N-type semiconductor material arranged in a vertical configuration. This allows the FDB9406L-F085 to draw electrical current only across the vertical sections, retaining low-resistance operation and high-power integrity. It also allows for the device to be operated at high frequencies with minimal power loss.

In addition to its high power ratings, the FDB9406L-F085 is also highly rated for its performance characteristics. It possesses a low gate threshold voltage of 3.0 V and a low gate charge of 12 nC. This makes for reduced switching losses, allowing for higher switching frequencies in applications. Additionally, its low input capacitance of 11 pF allows for fast rise and fall times with minimal ringing.

The main application field of the FDB9406L-F085 is power management in motor control and load switching applications. When the device is used in a motor control application, it operates as a switch between the power supply and the controlled motor. This allows the motor to be switched on or off quickly and efficiently with minimal energy loss. The FDB9406L-F085 also finds use in load switching, where it functions as a switch between the power source and the desired load. This makes it possible to control the amount of power that flows through the circuit and adjust the electrical load accordingly.

The working principle of the FDB9406L-F085 is based on the internally-generated electric field within the device. When a voltage is applied to the gate, an electric field is created between the drain and source. This electric field provides an attractive force between the electrons and holes in the semiconductor material, allowing current to flow between these areas. As the voltage applied to the gate increases, the electric field produced becomes stronger and the current flowing between the drain and source increases. This phenomenon is known as drain-source conduction.

The FDB9406L-F085 is an ultra low-RDS(ON)-capable N-channel power MOSFET designed for a wide range of applications, including motor control, load switching, power supply, and audio amplifier applications. It offers superior performance with a drain-to-source current rating of 24 A, a low on-resistance of 0.07 Ω, a low gate threshold voltage of 3.0 V, a low gate charge of 12 nC, and an input capacitance of 11 pF. These characteristics make the FDB9406L-F085 an ideal choice for applications requiring high power handling, reduced switching losses, and fast rise and fall times with minimal ringing.

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