| Allicdata Part #: | FDC021N30TR-ND |
| Manufacturer Part#: |
FDC021N30 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | PT8 N 30V/20V, MOSFET |
| More Detail: | N-Channel 30V 6.1A (Ta) 700mW (Ta) Surface Mount S... |
| DataSheet: |  FDC021N30 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | SOT-23-6 |
| Supplier Device Package: | SuperSOT™-6 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 700mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 10.8nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 6.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.1A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FDC021N30 is a single field effect transistor (FET) commonly used in high-frequency power conversion. It is an insulated gate bipolar transistor (IGBT) that combines the characteristics of both MOSFETs and bipolar transistors to combine two different semiconductor materials needed to produce the power. It has a wide range of applicability and is used for motor control, power regulation, data conversion, voltage regulation, switching and amplification.
In a single FET, the source terminal gate is connected to the drain terminal of the device, with the gate operating as a control element for the differential current flow between source and drain. The FET can be used as either a unipolar or bipolar device, with the choice depending on the particular application. Single FETs typically have a high switching speed, low impedance and high current capability.
The FDC021N30 is a particularly robust single FET, with the ability to operate at up to 400A in a steady-state. It is suitable for applications where high-power operation and long-term stability is required. It has a breakdown voltage of 600V, with a 20V drive voltage capability. Its construction is optimized to reduce power losses, including copper base and copper lead technology.
The FDC021N30 has a wide range of applications, including uninterruptible power supplies (UPS), motor control and power conversion, audio equipment and devices, automotive diagnostics and control, and aerospace applications. It is able to provide high current, high efficiency and low heat dissipation in these applications.
When using the FDC021N30, the desired characteristics for the device can be adjusted through the use of gate drive, which controls the voltage applied to the gate. This can be used to adjust the current flow through the device, and is an essential part of controlling the performance of the device. The use of gate drive also helps reduce risk of over-current and over-voltage, and helps optimize the device performance.
The FDC021N30 also has the advantage of being a high-power and high-efficiency device, which helps reduce system heat and power loss. The device is also capable of achieving fast turn-on and turn-off times, which helps to increase the power adapter efficiency.
In summary, the FDC021N30 is a versatile single FET with a wide range of applicability. It has the capability to handle high currents and is well-suited to high-power applications where reliability and long-term stability are required. Its design also helps reduce system heat, making it a good choice for many applications. In addition, its gate drive capability allows for adjustment of parameters for optimized performance.
The specific data is subject to PDF, and the above content is for reference
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