FDC3601N

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	1A
Rds On (Max) @ Id, Vgs:	500 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	153pF @ 50V
Power - Max:	700mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	SuperSOT™-6

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In recent years, various application fields of field effect transistors (FETs) have been increasing, such as FET switching devices and high-frequency circuits. FDC3601N, which is a low-power P-channel metal oxide semi-conductor (MOSFET) array, is one of the most popular FETs nowadays. In this article, we will discuss its application field and working principle. FDC3601N, which is used in low-voltage power supply and is employed in a wide range of digital integrated circuits, linear circuits and power amplifiers, is commonly used in switch-mode power supplies (SMPSs), DC-DC converters, motor drivers, and motor control. It is mainly applied in industrial automation and consumer electronics applications, such as home appliances, electric vehicles, and robots. FDC3601N, as an enhancement-mode static switch, has four independent and isolated P-channel MOSFETs which are constructed on a single semiconductor dies. Each MOSFET is identified as denoted by four separate letters, A, B, C, and D. It has a maximum voltage of -40 V and a maximum current (in pulsed mode) of 8 A. The working principle of FDC3601N involves connecting two sources, one for VGS (gate voltage) and one for VDS (drain voltage) to each of the four MOSFETs. When the gate voltage (VGS) is increased, the drain current (ID) of each MOSFET increases. The drain current will increase towards its maximum value, which is known as the cut-off voltage or saturation voltage (VDSsat). The maximum drain current is limited by the internal parasitic components and the maximum drain voltage. When the voltage on the gate (VGS) is decreased below the cut-off voltage, the drain current (ID) of each MOSFET is controlled by the external gate resistance. In addition, the internal gate-to-source capacitance (Cgs) of each of the four MOSFETs is proportional to its gate voltage (VGS). This capacitance also restricts the transient response of the FDC3601N. The FDC3601N has a wide range of applications in industries. It can be used as a direct DC-DC controller in laptop computers, LCD monitors, and other power supplies. It can also be used in electric vehicles for the implementation of various control systems such as throttle control, brake control, and motor speed control. In addition, this device is also suitable for controlling inrush current in AC-DC power supplies and speed control of fans.The usage of FDC3601N also includes linear circuits such as operational amplifiers and voltage regulators as well as pulse-width modulation (PWM) devices. In PWM circuits, this device is used to switch the transistor off for a certain period of time. Furthermore, this device is suitable for high frequency circuits such as switching regulators, DC-DC converters, and motor drivers. To sum up, FDC3601N is a highly efficient low-power P-channel MOSFET array which is used in various application fields such as power supplies, motor control, and high-frequency circuits. It is mainly used in laptop computers, LCD monitors, electric vehicles, industrial automation, and consumer electronics. Its working principle involves connecting two sources, one for VGS (gate voltage) and one for VDS (drain voltage) to each of the four MOSFETs and its internal parasitic components, such as gate-to-source capacitance, restrict its transient response.

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