Allicdata Part #: | FDC3612TR-ND |
Manufacturer Part#: |
FDC3612 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 2.6A SSOT-6 |
More Detail: | N-Channel 100V 2.6A (Ta) 1.6W (Ta) Surface Mount S... |
DataSheet: | FDC3612 Datasheet/PDF |
Quantity: | 10000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 2.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDC3612 is a dual P-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) for use in applications where power performance and high efficiency is paramount. It offers a wide range of features and benefits that make it a good choice for many projects. Let’s take a closer look at the FDC3612 and see how it can be used.
Application field of FDC3612
FDC3612 is an ideal choice for load switching applications that require high efficiency, low charge injection and low on-resistance. It is designed for use in high speed, high accuracy control systems. It can be used in motor control applications, including motors with brushless dc, induction and stepping motor types, as well as other applications such as HVPPs, HVCCs, automotive and industrial motor-control applications. It can also be used in consumer electronics such as photocopiers, fax machines, printers, and medical devices. It is suitable for use in applications where low input and output capacitance is required.
FDC3612 is also suitable for use in consumer electronic systems, such as set-top boxes, DVD players and home theater systems. It has a high switching frequency of up to 30kHz, which makes it ideal for these types of applications. It can also be used in lighting applications such as LED dimming, halogen lamp dimming and CFL/LED lamp dimming. It can also be used in renewable energy inverter designs, smart grid metering, and solar power applications.
FDC3612 is suitable for use in power management applications such as DC-DC converters, buck/boost converters, switched mode power supplies, and bidirectional converters. It is designed to handle current control up to 12A and can be used in high side and low side switch designs. It is also suitable for use in system level power distribution and sequencing. It can also be used in various automotive applications such as power distribution, motor control, and HV battery management.
Working Principle Of FDC3612
The FDC3612 is a dual-channel p-channel low voltage MOSFET. It is designed to be used in high-speed switching and control applications. The device features low Qg and Qgd gate charge, low gate-source capacitance, low on-resistance, and integrated body diodes. The FDC3612 is also designed for low switching loss that helps to minimize total power consumption in the system.
The FDC3612 has a gate threshold voltage (Vgs) of -3V, which is usually used in source-gate driven applications. The gate-source voltage (Vgs) of the FDC3612 changes its resistance state according to the input signal. The drain-source voltage (Vds) of the FDC3612 changes according to the gate-source voltage, thus modulating the on-resistance of the device. The on-resistance is determined by the gate-source voltage, input current and junction temperature.
The FDC3612 has an integrated body diode, which allows it to provide a maximum drain-source voltage of 70V and a maximum drain current of 12A. The gate charge of the device, which is the amount of charge necessary to move the gate from cut-off to saturation, is very low at 4nC for both P and N type versions. The gate-source capacitance of the device is also very low at 11 pF, which allows for low input capacitance and low switching loss.
In conclusion, FDC3612 is an ideal choice for high power performance and high efficiency applications. It features low charge injection, low input and output capacitance, high switching frequency and low on-resistance, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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