FDC3616N Discrete Semiconductor Products |
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Allicdata Part #: | FDC3616NTR-ND |
Manufacturer Part#: |
FDC3616N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 3.7A SSOT-6 |
More Detail: | N-Channel 100V 3.7A (Ta) 2W (Ta) Surface Mount Sup... |
DataSheet: | FDC3616N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
Supplier Device Package: | SuperSOT™-6 FLMP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1215pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 3.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDC3616N is a single N-channel MOSFET, also known as a metal oxide semiconductor field-effect transistor. It is a device used in electronic circuits to control current flow. MOSFETs are used as switches, amplifiers, and regulators because of their high input impedance and high-frequency response. In this article, we will discuss the FDC3616N’s application field and working principle.
Application Field
The FDC3616N is suitable for a wide variety of switching, amplifier, and low power regulator applications. It is most commonly used as a switch in high-speed, high-density circuits, such as for controlling transistors, SRAMs, and other logic devices. It can also be used to control LED drivers and LED dimmers as well as in various low power voltage regulator circuits. The FDC3616N can also be used in RF applications, such as for controlling RF signals and amplifiers.
Working Principle
MOSFETs like the FDC3616N operate on the principle of conducting current only when the electric or magnetic field is applied. In the normal state, the MOSFET has an extremely high input impedance because of the electric field that surrounds it. When the electric field applied by a voltage source is larger than the electric field of the MOSFET, the open channel is formed, allowing current to flow. The current that flows is proportional to the applied voltage.
The FDC3616N is particularly beneficial because of its on-state resistance and its breakdown voltage. On-state resistance is the resistance of the MOSFET when it is in the “on” state. The FDC3616N has a low on-state resistance which allows it to switch on and off quickly and efficiently. The breakdown voltage is the voltage level at which the MOSFET turns “on” and allows current to flow.
The FDC3616N also has a low input capacitance which helps to minimize switching loss and lowers the device’s power consumption. This is beneficial for a variety of applications where power consumption and efficiency are important. Also, the FDC3616N is RoHS-compliant and has a high reliability rating, making it reliable and durable.
Conclusion
The FDC3616N is a single N-channel MOSFET that is suitable for a wide range of applications. It has a low on-state resistance, low input capacitance, and a high breakdown voltage. These features make it well suited for high-speed, low-power applications, and it is also RoHS-compliant with a high reliability rating. In summary, the FDC3616N is an excellent choice for a variety of electronic circuit applications.
The specific data is subject to PDF, and the above content is for reference
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