Allicdata Part #: | FDC30N20DZOSTR-ND |
Manufacturer Part#: |
FDC30N20DZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 4.6A SOT23-6 |
More Detail: | N-Channel 30V 4.6A (Ta) 960mW (Ta) Surface Mount S... |
DataSheet: | FDC30N20DZ Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 960mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 535pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 4.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDC30N20DZ, part of the Fairchild Semiconductor Corp.’s portfolio of low VCE(SAT) MOSFET transistors, is a 20A, 200V N-Channel MOSFET featuring an enhanced drain design. It is designed for use in a wide range of applications, including DC and AC motors, drives, switching power supplies, robotics, and solar inverters. This article will discuss the application field and working principle of FDC30N20DZ.
Applications
FDC30N20DZ is suitable for use in many different applications due to its low VCE(SAT). It can be used in DC and AC motors for switching, drives, and motor control. It can also be used in robotic applications, such as actuators, sensors, and motor drivers. This transistor can also be used in switching power supplies, which are used to convert AC voltage to DC voltage. In addition, it can be used in solar inverters, which are used to convert DC voltage from solar panels into useful AC voltage.
Working Principle
FDC30N20DZ is a N-Channel MOSFET, which is a type of transistor. It is designed for switching and amplifying electrical signals. The FDC30N20DZ has an enhanced drain design that enables it to operate at a lower VCE (SAT). It has a VDS of 200V, which is the maximum voltage the transistor can handle. The RDS(on) is the maximum resistance of the channel when the transistor is turned on, and it is typically around 0.0035 ohms.
The FDC30N20DZ isGate is responsible for controlling the amount of current that flows through the channel. When a voltage is applied to the gate, it causes the channel to become more conductive, allowing more current to pass through. The higher the voltage applied to the gate, the more current will pass through the channel. This makes the transistor ideal for use in applications that require fast switching or amplification of electrical signals.
The FDC30N20DZ can handle up to 20A of current, making it ideal for applications with high current requirements. It has a low gate to source threshold voltage, which means it can be switched on quickly. Additionally, the FDC30N20DZ has a low input capacitance which helps reduce switching losses.
In conclusion, the FDC30N20DZ is a low VCE(SAT) MOSFET transistor that is suitable for use in a wide range of applications. It is designed for DC and AC motors, drives, switching power supplies, robotics, and solar inverters. The FDC30N20DZ is capable of handling up to 20A of current and can be switched on quickly due to its low gate to source threshold voltage. This makes it ideal for applications with high current requirements or that require fast switching and amplification of electrical signals.
The specific data is subject to PDF, and the above content is for reference
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