FDC796N Discrete Semiconductor Products |
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Allicdata Part #: | FDC796NTR-ND |
Manufacturer Part#: |
FDC796N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 12.5A SSOT-6 |
More Detail: | N-Channel 30V 12.5A (Ta) 2W (Ta) Surface Mount Sup... |
DataSheet: | FDC796N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
Supplier Device Package: | SuperSOT™-6 FLMP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1444pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 12.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDC796N is a high voltage, moderate powered Field Effect Transistor (FET) that has many applications in various electronic projects such as amplifiers, switches, and more. As an N-channel FET, it can act as an amplifier, switch, and more, for when voltagepulling and pushing is desired.
The FDC796N is specifically utilized for controlling high voltage signals with low power in applications such as motor control, audio circuits, and general purpose analog switches. It offers a power output capacity of up to 250 W (at 60 V dc) and plentiful features, such as speed-up circuitry, which makes it one of the most versatile FETs available.
The working principle of the FDC796N is based on the fact that this Field Effect Transistor (FET) works by creating an electric field between the gate and the source. A flow of current between the gate and the source brings the FET into a conducting state. The current that passes through the FET determines the overall level of amplification.
The FDC796N provides a high (up to 150V) continuous drain-source voltage rating and a low on-resistance of 85 mΩ, making it ideal for applications where high currents are to be controlled. It also offers low input capacitance of 0.2 pF between gate and source and respectable thermal performance with its very low on-state resistance in the 20-25 mΩ range.
In summary, the FDC796N FET is a powerful yet efficient device with a wide range of applications. It is able to handle high voltages and moderate powers at the same time. It is suitable for use as an amplifier, switch, or as a general purpose electronic device due to its relatively low on-resistance and input capacitance. Furthermore, it provides good thermal performance with a very low on-state resistance.
The specific data is subject to PDF, and the above content is for reference
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