Allicdata Part #: | FDD068AN03L-ND |
Manufacturer Part#: |
FDD068AN03L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 35A D-PAK |
More Detail: | N-Channel 30V 17A (Ta), 35A (Tc) 80W (Tc) Surface ... |
DataSheet: | FDD068AN03L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2525pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 35A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDD068AN03L is a single N-channel Enhancement Mode Field Effect Transistor (FET) designed specifically for use in mission-critical, high speed switching applications. The FDD068AN03L’s superior performance makes it ideal for high speed switching and high frequency applications such as power converters, AC-motor drives, and new-generation servers.
The FDD068AN03L features a low RDS(ON) of 190 milliohms, a low gate charge (Qg) of 2.2nC, and a maximum power rating of 2.9W, making it suitable for use in high power density switching applications.
The FDD068AN03L is also highly efficient, boasting a maximum junction temperature rating of +125°C and a maximum operating temperature range of -35°C to +85°C. With its low on-resistance and low gate charge, it is well suited for both low-side and high-side applications. The FDD068AN03L also offers superior noise immunity, allowing it to reliably perform in high noise environments.
The working principle behind the FDD068AN03L is simple. It is essentially a voltage-controlled switch; when a voltage is applied to its gate, it allows the current to flow through its drain and source. The magnitude of this current is determined by the voltage applied to the gate and its drain-source resistance. The higher the voltage on the gate, the higher the current that flows through the drain and source.
The FDD068AN03L is a high-performance, cost-effective solution for high-power switching applications. Its low on-resistance, high power rating and small size make it an ideal choice for demanding applications. With its ability to operate in high temperature and noise environments, it is well-suited for mission-critical applications such as servers, power converters, and AC motor drives.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDD044AN03L | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 35A D-PAK... |
FDD068AN03L | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 35A D-PAK... |
FDD050N03B | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 90A DPAKN... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...