Allicdata Part #: | FDD10N20LZTMTR-ND |
Manufacturer Part#: |
FDD10N20LZTM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 7.6A DPAK-3 |
More Detail: | N-Channel 200V 7.6A (Tc) 83W (Tc) Surface Mount DP... |
DataSheet: | FDD10N20LZTM Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 585pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | UniFET™ |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDD10N20LZTM is a type of Field Effect Transistor (FET) that belongs to the MOSFET family of Single Transistors. This type of transistor functions as an electronic switch, allowing or preventing current from flowing through components or circuits depending on the voltage applied to the MOSFET’s Gate terminal.
The FDD10N20LZTM model is designed for use in a wide range of applications in industrial and consumer products. This is because it offers low ON-resistance, which ensures efficient power consumption when switching rapidly between ON and OFF states. The FDD10N20LZTM transistor is a P-Channel type and is capable of providing up to 4A of current at 40V. The device also has an integrated diode, which helps protect against accidental reversed voltage.
The application field for FDD10N20LZTM transistors is incredibly versatile and can be used in a wide variety of projects and applications. Applications include motor control circuits, microcomputer Interface Circuits, power supply circuits, and LCD display circuits. The FDD10N20LZTM transistor is also used in audio amplifiers and signal conditioning circuits for sound recording and processing.
In order for FDD10N20LZTM transistors to work as intended, there are certain things that need to be taken into consideration. First, a capacitor needs to be connected to the Gate terminal of the device in order to protect it from any electrical noise. Additionally, the power source should be rated to be at least 4A, as this is the current handling capability of the FDD10N20LZTM transistor. Finally, the level of the voltage applied to the Gate terminal must be between -2V and +6V.
The working principle behind FDD10N20LZTM transistors is fairly straightforward. When voltage is applied to the Gate terminal of the device, it induces a current flow through the source and drain of the device. This current flow results in a change in the MOSFET’s switch state, which can either be ON or OFF. A higher voltage applied to the Gate will make the switch state ON, while a lower voltage will make the switch state OFF. When the switch is ON, current will flow through the device, but when the switch is OFF, no current will flow.
The FDD10N20LZTM transistor is a versatile and reliable P-Channel type MOSFET, designed for use in a wide array of applications. This device is able to handle up to 4A of current at 40V, and its low ON resistance ensures efficient power consumption when switching rapidly between ON and OFF states. Furthermore, the FDD10N20LZTM transistor is fairly straightforward to use, as the user simply needs to apply a voltage between -2V and +6V on the Gate terminal in order to change the switch state of the device.
The specific data is subject to PDF, and the above content is for reference
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