FDD13AN06A0 Discrete Semiconductor Products

Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Base Part Number:	FDD13AN06
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	115W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1350pF @ 25V
Vgs (Max):	±20V
Series:	PowerTrench®
Vgs(th) (Max) @ Id:	4V @ 250µA
Rds On (Max) @ Id, Vgs:	13.5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	9.9A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDD13AN06A0 Application Field and Working Principle

The FDD13AN06A0 is a N-channel enhancement-mode Field Effect Transistor (FET) which utilizes advanced trench technology to provide absolute performance in power switching applications. It is commonly used in power management circuits, typically employed between a power source and load in a circuit. The device can also serve as an electronic switch, opening and closing to control the flow of current.

Overview

The FDD13AN06A0 is an enhancement-mode FET which is able to enhance an input signal in order to create an output. This transistor is an N-channel type, meaning it is composed of four layers: gate, drain, source, and body. The gate functions as the input or control, the drain and source are the two output terminals, and body is the substrate to which the gate, drain and source are connected.

Operation

When no voltage is applied to the gate of the FDD13AN06A0, it is in its “off” state with zero current flowing between its drain and source terminals. In order for current to flow, a voltage must be applied to the gate terminal. This voltage increases the conductivity of the channel, allowing current to flow from the drain to the source. The gate has a capacitive nature, causing a change in the drain current only when the voltage applied to the gate changes. As the voltage supplied to the gate reaches the threshold voltage, the drain current increases rapidly. The threshold voltage of the FDD13AN06A0 is typically 4V.

Features

The FDD13AN06A0 is rated for a maximum drain-source voltage of 30V, has a maximum continuous current rating of 10A, and has a maximum power dissipation rating of 40W. It also has a highly efficient on-state resistance of 0.0046Ohm, enabling powerful current transfer capabilities. The FDD13AN06A0 also has a low gate-to-drain charge of 0.5nC and a fast switching time between the on-state and off-state states.

Applications

Given its features and specifications, the FDD13AN06A0 is well-suited for a variety of power management and power switching applications. These include switching applications such as the control of solenoids, relays, and motors. The FDD13AN06A0 is also suitable for circuits which require low gate charge and high current transfer capabilities, such as DC/DC converters, switch-mode power supplies, and power inverters. Additionally, the FDD13AN06A0 is a popular choice for automotive applications, such as engine control modules (ECMs) and alternators.

Conclusion

The FDD13AN06A0 is a N-channel enhancement-mode FET which offers powerful current transfer capabilities and fast switching times. Its characteristics make it well-suited for a variety of applications, such as power management, power switching, and automotive applications. This FET is also highly efficient due to its low gate-to-drain charge and on-state resistance.

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