FDD7N20TM Allicdata Electronics
Allicdata Part #:

FDD7N20TMTR-ND

Manufacturer Part#:

FDD7N20TM

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 5A D-PAK
More Detail: N-Channel 200V 5A (Tc) 43W (Tc) Surface Mount D-Pa...
DataSheet: FDD7N20TM datasheetFDD7N20TM Datasheet/PDF
Quantity: 10000
1 +: $ 0.20000
10 +: $ 0.19400
100 +: $ 0.19000
1000 +: $ 0.18600
10000 +: $ 0.18000
Stock 10000Can Ship Immediately
$ 0.2
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 43W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Series: UniFET™
Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDD7N20TM is a commonly used Field Effect Transistor (FET) in the electronics industry. It’s an N-channel, MOSFET type transistor, designed to work with low drain-source and gate-source voltages. The FDD7N20TM is an incredibly versatile component that can be used in a wide range of application fields, such as switching and amplifying signals. The following piece will explore the working principle, properties and application field of the FDD7N20TM.

Working Principle

The FDD7N20TM has an isolated gate electrode, known as a ‘gate’. This gate acts as a capacitor, so when a voltage is applied to it, the gate will store electrical charge. This in turn can control the current that is allowed to flow between the source and drain terminals. When the gate is positive the current will increase, and when it’s negative the current will decrease. This is known as the MOSFET’s ‘transconductance’, which is the change in drain current on application of a change in gate voltage.

Properties

The FDD7N20TM is a high-performance MOSFET, designed to make use of its low on-resistance, fast switching and low input capacitance. The FDD7N20TM has a high power dissipation, making it a great choice for applications where power dissipation needs to be kept to a minimum. The FDD7N20TM is also a low-noise device, meaning it is suitable for use in sensitive audio processing applications. The FDD7N20TM has a Drain-to-Source breakdown voltage of 200V. It has a Gate-to-Source voltage of +/- 20V and a Gate-to-Drain voltage of 12V. The FDD7N20TM has a maximum temperature rating of 175°C.

Application Field

The FDD7N20TM can be used in a wide range of applications, including those which require high power dissipation and low noise. It’s commonly used in switching and amplifying circuits, due to its low on-resistance and low input capacitance. It can also be used as a voltage regulator and an amplifier, due to its low noise. The FDD7N20TM is also well-suited for use in motor control applications, due to its low temperature rating. It can also be used in power supplies and signal distribution circuits.

Conclusion

The FDD7N20TM is a versatile Field Effect Transistor designed to make use of its low on-resistance, fast switching and low input capacitance. Its low noise and high power dissipation make it well-suited for use in sensitive audio processing applications and power control. The FDD7N20TM is a great choice for use in a wide range of applications, including switching, amplifying and motor control.

The specific data is subject to PDF, and the above content is for reference

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