FDFC2P100 Allicdata Electronics

FDFC2P100 Discrete Semiconductor Products

Allicdata Part #:

FDFC2P100TR-ND

Manufacturer Part#:

FDFC2P100

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 3A SSOT-6
More Detail: P-Channel 20V 3A (Ta) 1.5W (Ta) Surface Mount 6-SS...
DataSheet: FDFC2P100 datasheetFDFC2P100 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-SSOT
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDFC2P100 is a type of FET (field effect transistor) called a MOSFET (metal-oxide-semiconductor field-effect transistor). It is a general-purpose, single-channel device that is suitable for applications such as analog or digital switching, voltage regulation, and high-speed switching. The FDFC2P100 is available in several different packages that offer various levels of thermal performance and total drain-source leakage current.

MOSFETs are devices based on the three-terminal FET. Unlike the traditional bipolar devices, MOSFETs are built from a combination of metal wires and a semiconductor material. This combination of materials allows the MOSFET to be used as a switching device; when the gate voltage is adjusted, current is allowed to pass through the channel between the source (S) and the drain (D). The MOSFET is also able to feature much lower on-state resistance and higher switching speed than other types of FETs.

The FDFC2P100 is specifically designed to employ the special capabilities of MOSFETs to their fullest potential. It is a single-channel device—one source and one drain—that operates from an input voltage range of -55 to +90V. It has a breakdown voltage at drain-source (Vds) of 100V, an on-state resistance (RDSon) of 0.010Ω, and a total gate charge (Qg) of 3.2nC. The FDFC2P100 also features a low total drain-source capacitance (Cds), making it suitable for high-speed applications.

The main application of the FDFC2P100 is as a switching device. When a voltage is applied to the gate, the MOSFET will either allow or prevent current from flowing through the channel between the source and the drain. In this way, the device can be used to control the flow of electricity in circuits. The FDFC2P100 can also be used for voltage regulation, since the voltage of the output is determined by the voltage of the gate.

In addition to these functions, the FDFC2P100 can be used for a variety of other applications. It can be used as a power amplifier, an audio switch or mixer, an RF switch, a voltage regulator, and much more. The device is also designed to be reliable, efficient, and low-power consuming, making it suitable for a wide range of industrial and consumer applications.

The FDFC2P100 is a highly versatile device that can be used in a variety of different applications. It is designed to be reliable and efficient, and it has a wide range of features that make it suitable for a wide range of applications. Whether it is used in analog or digital switching, voltage regulation, or high-speed switching, the FDFC2P100 is an excellent choice.

The specific data is subject to PDF, and the above content is for reference

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