FDH210N08 Allicdata Electronics
Allicdata Part #:

FDH210N08-ND

Manufacturer Part#:

FDH210N08

Price: $ 5.63
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 75V 210A TO-247-3
More Detail: N-Channel 75V 462W (Tc) Through Hole TO-247
DataSheet: FDH210N08 datasheetFDH210N08 Datasheet/PDF
Quantity: 101
1 +: $ 5.62590
10 +: $ 5.45712
100 +: $ 5.34460
1000 +: $ 5.23209
10000 +: $ 5.06331
Stock 101Can Ship Immediately
$ 5.63
Specifications
Rds On (Max) @ Id, Vgs: --
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 462W (Tc)
FET Feature: --
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: --
Series: --
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FDH210N08 is a field-effect transistor (FET) that is used to control the flow of current in an electrical circuit. It functions like a solid-state switch, allowing current to flow through a circuit when a gate voltage is applied and turning off when the voltage is removed. The FDH210N08 is specifically a MOSFET (Metal-Oxide-Semiconductor FET), which is a voltage-controlled device that offers high switching speeds, low capacitance, and low-power operation. This makes it suitable for fast switching, high-voltage applications, and low-power consumer devices.

The FDH210N08 employs what is known as a depletion mode in order to control current flow. In this type of device, the current flow is blocked until a gate voltage is applied. The FET is then said to be in enhancement mode, wherein the current starts to flow. When the gate voltage is removed, the device reverts back to its depletion mode and blocks current flow again. This particular switching operation is highly efficient in terms of power consumption and switching speed.

This MOSFET is often used in various types of DC/DC converter applications, such as DC-DC converters in power supplies and motor controllers. It can also be used to control the speed of motors and is useful for low-power consumer devices like cell phones and portable computers. Other applications include high-frequency switching and logic-level conversion, as well as in power amplifiers and other audio applications.

The FDH210N08 consists of a semiconductor layer between two metal electrodes. One electrode is the gate, which serves as the controlling voltage. The other is the source, which is the entry point of the current. The current flows out through the drain. The drain and source are connected to the positive and negative components of the power supply, while the gate is connected to the controlling voltage. When the controlling voltage is changed, the amount of current passing through the device changes correspondingly due to the modulation of the channel.

The FDH210N08 is a specialty device that is designed for specific applications. It is best suited for applications where low current switching is required and where power dissipation is not a concern. As it is an MOSFET, it is also especially suitable for use when high-speed switching is desired and where very low power consumption is desired. The device is also capable of dissipating majority of the power that is dissipated in the circuit, resulting in a highly efficient device.

The FDH210N08 is an extremely useful semiconductor device with a variety of applications. Its fast switching speeds, low capacitance, and low-power operation make it very suitable in modern electronics and technology. Its depletion mode control of current transmission and efficient power dissipation make it attractive for a wide range of applications, such as DC/DC converters, high-frequency switching, motor control, and audio applications. With its versatility and efficiency, the FDH210N08 is certain to be found at the center of many new and innovative electronics.

The specific data is subject to PDF, and the above content is for reference

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