FDH633605 Allicdata Electronics
Allicdata Part #:

FDH633605-ND

Manufacturer Part#:

FDH633605

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH DO-35
More Detail: N-Channel Through Hole DO-35
DataSheet: FDH633605 datasheetFDH633605 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDH633605 is a device that belongs to N-channel Metal Oxide Semiconductor Field-Effect Transistors (MOSFET). This industry-standard device is normally used for low-side switching applications in the automotive environment such as pre-charge of the electric system and charge pumps. As an ESD-protected FET device, it has 8Ω R DS(on) and 1.2A I DC when switching at 10V. Therefore, it can provide optimal drive performances, which make it ideal for applications that require low EMI and low noise.

The FDH633605 is designed based on the principles of MOSFET. It consists of four main component parts: source, drain, gate and body (referred as substrate). Source, drain and gate are the three terminals of the transistor and they are connected externally to an electric circuit. The source serves as the input of the transistor, while the drain serves as its output. The gate serves as a switch to control the drain current when it is in the ON or OFF state.

When the gate is in its forward-biased state (positive voltage applied to the gate), the FET device is turned on, allowing the drain current to flow from the source to the drain. Conversely, when the gate is in its reverse-biased state (negative voltage applied to the gate), the FET is turned off, blocking the drain current. For example, if a transistor has a V GS of -7V, the FET device is considered to be OFF-state (gate voltage is reversed biased), thus, no drain current can flow through the device.

Thanks to its properties, FET devices are widely used in many electronic and electrical systems. As the most commonly used FET device in the automotive industry, the FDH633605 is typically applied in automotive electrical systems such as fuel pumps, charge pumps, starters, and relays. Furthermore, it can also be used in other applications such as HVAC systems, motor control, power supplies, solenoid control, and motor management.

The FDH633605 has two main advantages. Firstly, it has an ultra-low on-state resistance of 8Ω, which enables it to deliver fast switching times and less power loss. Secondly, its ESD protection feature prevent any kind of electrical overstress which makes it more reliable for applications that require high-dynamic range switching. Often, it is compared to FET switch FDH633604, another standard ESD protected FET switch.

Overall, the FDH633605 is a low-side N-channel MOSFET switchis, which provides an excellent switching performance for most applications. Thanks to its ultra-low on-state resistance and ESD protection feature, it is suitable for automotive applications such as pre-charging and fuel pump monitoring. In addition, the device is reliable and efficient, which makes it highly recommended for many different applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDH6" Included word is 4
Part Number Manufacturer Price Quantity Description
FDH600_T50A ON Semicondu... 0.0 $ 1000 DIODE GEN PURP 50V 200MA ...
FDH600_T50R ON Semicondu... 0.0 $ 1000 DIODE GEN PURP 50V 200MA ...
FDH600 ON Semicondu... 0.0 $ 1000 DIODE GEN PURP 50V 200MA ...
FDH633605 ON Semicondu... 0.0 $ 1000 MOSFET N-CH DO-35N-Channe...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics