| Allicdata Part #: | FDI8441_F085-ND |
| Manufacturer Part#: |
FDI8441_F085 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 40V 26A TO-262AB |
| More Detail: | N-Channel 40V 26A (Ta), 80A (Tc) 300W (Tc) Through... |
| DataSheet: |  FDI8441_F085 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK (TO-262) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 15000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 280nC @ 10V |
| Series: | Automotive, AEC-Q101, PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 80A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 26A (Ta), 80A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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FDI8441_F085 is a single field effect transistor (FET) designed primarily for load drain applications. It is part of a family of FETs that is designed for a variety of applications for use in various electric circuits. FDI8441_F085 is made up of two integral source and drain regions, plus a control electrode called the ‘gate’. The gate is connected by two metallic strips to the source and drain terminals, and this allows the control of current flow from the source to the drain.
The FDI8441_F085 is a high precision field effect transistor that is used in well-defined and predictable linear applications. This FET is widely used in industrial, commercial, military and aerospace applications such as in high current, high resistance circuits. It can be used in applications such as voltage regulators, ripple filters, and power regulators.
The FDI8441_F085 is also used in precision control applications. Its high frequency response and dynamic capability allows it to deliver accurate results very quickly. Its robust power handling capability also makes it suitable for high power applications. The FDI8441_F085 operates on a single voltage supply with a rated voltage range from 15 to 45V. The capacity of the FDI8441_F085 is capable of dissipating up to 120 watts.
The working principle of the FDI8441_F085 is based on the concept of field effect. This involves the application of an electric field to a semiconductor material in order to control and regulate the current flow. The electric field is applied through the gate terminal of the FDI8441_F085. When the gate voltage is increased, the electric field is strengthened, allowing more current to flow through the source-drain junctions. When the voltage is lowered, the current flow is decreased, resulting in an improved efficiency of the device.
The FDI8441_F085 is a high performance field effect transistor with a wide range of applications. It is well suited for high current, high resistance, voltage regulator and power regulator applications. Its high frequency response and dynamics capability allows it to deliver accurate results quickly. Its robust power handling capability also makes this device suitable for high power applications.
The specific data is subject to PDF, and the above content is for reference
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