FDL100N50F Allicdata Electronics
Allicdata Part #:

FDL100N50F-ND

Manufacturer Part#:

FDL100N50F

Price: $ 11.86
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 100A TO-264
More Detail: N-Channel 500V 100A (Tc) 2500W (Tc) Through Hole T...
DataSheet: FDL100N50F datasheetFDL100N50F Datasheet/PDF
Quantity: 1172
1 +: $ 11.85660
10 +: $ 11.25660
100 +: $ 10.34530
1000 +: $ 8.83390
10000 +: $ 5.72260
Stock 1172Can Ship Immediately
$ 11.86
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 238nC @ 10V
Series: UniFET™
Rds On (Max) @ Id, Vgs: 55 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FDL100N50F is a field-effect transistor (FET) composed of a single N-channel vertical double diffused MOSFET (VDMOS) in a plastic package. As a key component in circuit applications, FDL100N50F has become an important choice for engineers and technicians looking for reliable power solutions in various applications.

FDL100N50F is designed to have simple and robust characteristics. Being vertical double diffused, it has higher switching speed than ordinary MOSFET transistors, thus providing a great advantage when it comes to switching power. This makes FDL100N50F an ideal choice in switched-mode power supplies and other applications that require fast power switching operations. It also has low noise, high voltage blocking capabilities, low on-resistance, and low off-state capacitance.

FDL100N50F functions by exploiting the conductivity modulation of a semiconductormaterial, typically germanium or silicon. When an FET is connected, it can be thought of as two back-to-back Zener diodes, with the gate acting as a reverse-biased diode junction. This junction forms a depletion zone around the gate region of the FET, whose width depends on the gate-to-source bias. When the gate-to-source bias is zero (i.e., when the gate voltage is equal to the source voltage), the depletion zone is at its maximum width and the device is “off.” When the gate-to-source bias is positive (i.e., when the gate voltage is higher than the source voltage), the depletion zone narrows down and the device turns “on.”

Once the FET is “on,” the current can flow from the source to the drain terminal. The current is determined by a combination of the applied bias voltage and the gate-source voltage. The FET behaves like a resistor, with its resistance being proportional to the gate-source voltage and inversely proportional to the applied bias voltage. The output current is determined by the product of the gate-source voltage and the applied bias voltage.

FDL100N50F can be used in various applications, such as motor control, speed control, audio amplifiers, linear power amplifiers, power management and many more. It is also used in circuits where its simple characteristics make it the ideal choice. FDL100N50F is used in particular in circuits that require fast switching power. This makes it an ideal choice for applications such as switched-mode power supplies, DC-DC converters, inverters and motor control.

In summary, FDL100N50F is a versatile field-effect transistor that is suitable for many different applications. It has simple, robust properties which make it an ideal choice for applications that require fast switching power. It is also used in circuits where its simple characteristics make it the ideal choice. FDL100N50F is used in particular in circuits that require fast switching power and is therefore a great choice for many engineering applications.

The specific data is subject to PDF, and the above content is for reference

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