| Allicdata Part #: | FDL100N50F-ND |
| Manufacturer Part#: |
FDL100N50F |
| Price: | $ 11.86 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 500V 100A TO-264 |
| More Detail: | N-Channel 500V 100A (Tc) 2500W (Tc) Through Hole T... |
| DataSheet: | FDL100N50F Datasheet/PDF |
| Quantity: | 1172 |
| 1 +: | $ 11.85660 |
| 10 +: | $ 11.25660 |
| 100 +: | $ 10.34530 |
| 1000 +: | $ 8.83390 |
| 10000 +: | $ 5.72260 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-264-3, TO-264AA |
| Supplier Device Package: | TO-264 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2500W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 12000pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 238nC @ 10V |
| Series: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 55 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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FDL100N50F is a field-effect transistor (FET) composed of a single N-channel vertical double diffused MOSFET (VDMOS) in a plastic package. As a key component in circuit applications, FDL100N50F has become an important choice for engineers and technicians looking for reliable power solutions in various applications.
FDL100N50F is designed to have simple and robust characteristics. Being vertical double diffused, it has higher switching speed than ordinary MOSFET transistors, thus providing a great advantage when it comes to switching power. This makes FDL100N50F an ideal choice in switched-mode power supplies and other applications that require fast power switching operations. It also has low noise, high voltage blocking capabilities, low on-resistance, and low off-state capacitance.
FDL100N50F functions by exploiting the conductivity modulation of a semiconductormaterial, typically germanium or silicon. When an FET is connected, it can be thought of as two back-to-back Zener diodes, with the gate acting as a reverse-biased diode junction. This junction forms a depletion zone around the gate region of the FET, whose width depends on the gate-to-source bias. When the gate-to-source bias is zero (i.e., when the gate voltage is equal to the source voltage), the depletion zone is at its maximum width and the device is “off.” When the gate-to-source bias is positive (i.e., when the gate voltage is higher than the source voltage), the depletion zone narrows down and the device turns “on.”
Once the FET is “on,” the current can flow from the source to the drain terminal. The current is determined by a combination of the applied bias voltage and the gate-source voltage. The FET behaves like a resistor, with its resistance being proportional to the gate-source voltage and inversely proportional to the applied bias voltage. The output current is determined by the product of the gate-source voltage and the applied bias voltage.
FDL100N50F can be used in various applications, such as motor control, speed control, audio amplifiers, linear power amplifiers, power management and many more. It is also used in circuits where its simple characteristics make it the ideal choice. FDL100N50F is used in particular in circuits that require fast switching power. This makes it an ideal choice for applications such as switched-mode power supplies, DC-DC converters, inverters and motor control.
In summary, FDL100N50F is a versatile field-effect transistor that is suitable for many different applications. It has simple, robust properties which make it an ideal choice for applications that require fast switching power. It is also used in circuits where its simple characteristics make it the ideal choice. FDL100N50F is used in particular in circuits that require fast switching power and is therefore a great choice for many engineering applications.
The specific data is subject to PDF, and the above content is for reference
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FDL100N50F Datasheet/PDF