FDM21-05QC Allicdata Electronics
Allicdata Part #:

FDM21-05QC-ND

Manufacturer Part#:

FDM21-05QC

Price: $ 10.41
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 21A I4-PAC-5
More Detail: N-Channel 500V 21A (Tc) Through Hole ISOPLUS i4-P...
DataSheet: FDM21-05QC datasheetFDM21-05QC Datasheet/PDF
Quantity: 1000
24 +: $ 9.46211
Stock 1000Can Ship Immediately
$ 10.41
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: i4-Pac™-5
Supplier Device Package: ISOPLUS i4-PAC™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 220 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FDM21-05QC is a type of single-channel high-voltage MOSFET. It is commonly used for logic switching applications, providing higher efficiency and lower power consumption compared to other semiconductor devices. The FDM21-05QC also offers high reliability and low on-resistance, making it an excellent choice for high-availability, high-performance applications in a wide variety of industrial, automotive, and consumer electronics markets.
The FDM21-05QC is a MOSFET device specifically designed to operate in the high-voltage range. It is capable of transferring large amounts of power through smaller and lighter packages with lower resistance than traditional semiconductor devices. The FDM21-05QC is built on a vertical double-diffused metal-oxide-semiconductor process, with the FDM21-05QC utilizing trench technology for increased speed and performance. The device features electrostatic protection, which helps reduce the risk of damage due to electrostatic discharges.
The FDM21-05QC has a typical voltage rating of 40 volts and a maximum voltage rating of 50 volts. It also offers a current rating of 10 amps, allowing it to switch power efficiently. The device is designed to operate with an average switching time of 1.2 ns, enabling it to keep up with the ever-increasing speed requirements of the modern world. The FDM21-05QC also boasts a low profile package, enabling it to fit into tighter spaces, reducing the size and complexity of the circuitry.
The working principle of the FDM21-05QC relies on the use of two metal-oxide semiconductor transistors referred to as MOSFETs. When the MOSFETs are turned on, current is passed between the source and the drain, allowing a voltage to be applied to the gate. When the voltage is applied to the gate, the MOSFETs switch from off to on, and the current is allowed to pass through the channel of the FDM21-05QC. This process is reversible, allowing for efficient power switching operations.
The FDM21-05QC finds its application in a wide variety of industrial, automotive, and consumer electronics markets. Its low profile package and low on-resistance make it an ideal solution for applications that require high efficiency, low power consumption, and high reliability. The FDM21-05QC is widely used in power supplies, DC-DC converters, motor control, and automotive systems. Additionally, it is also used in LED lighting, solar and renewable energy systems, and aircraft and defense systems.
Overall, the FDM21-05QC is an efficient and reliable single-channel MOSFET device that is widely used for high-voltage operations in industrial and consumer applications. The device offers high-speed switching, low power consumption and high reliability, making it an ideal choice for a wide variety of applications that require power efficiency and reliability.

The specific data is subject to PDF, and the above content is for reference

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