| Allicdata Part #: | FDM606P-ND |
| Manufacturer Part#: |
FDM606P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 20V 6.8A MICROFET |
| More Detail: | P-Channel 20V 6.8A (Tc) 1.92W (Ta) Surface Mount 8... |
| DataSheet: |  FDM606P Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Package / Case: | 8-SMD, Flat Lead Exposed Pad |
| Supplier Device Package: | 8-MLP, MicroFET (3x2) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.92W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 4.5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 6.8A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 6.8A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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FDM606P is a depletion mode insulated gate field effect transistor (IGFET) that operates in depletion mode, also known as “normally off” mode. It is a low-cost, low-threshold voltage, low power consumption, and single N-channel enhancement mode MOSFET.
It is designed for use in variety of low power, low voltage applications such as logic circuits, DC-DC converters, and switching regulators. The FDM606P has the advantage of a low on-resistance channel, a low threshold voltage and low power consumption.
The working principle of the FDM606P is based on the electrostatic field effect phenomenon. The N-channel MOSFET has two terminals, the drain and the source. A gate electrode separates the drain and source by creating an electrostatic field between them, which lets the transistor to be operated as an amplifier or a switch. This is the reason why it is also called an insulated gate field effect transistor (IGFET).
The FDM606P can be used for various low voltage applications, such as DC-DC converters, logic circuits, and switching regulators. The FDM606P has a low on-resistance channel and a low power dissipation, which makes it suitable for these types of applications. The low power dissipation results in a better efficiency and consequently, lower energy bills. In addition, the low threshold voltage of the FDM606P enables it to operate in higher temperatures without reducing the functional performance.
The FDM606P can also be used in power switches and motor control. The low on-resistance channel makes it suitable for switching applications and the low power consumption results in higher efficiency. The device also has a low temperature coefficient, which makes it ideal for operating in temperatures up to 150°C.
The FDM606P also can be used to control power circuits. The low on-resistance channel helps to reduce the power loss and the low power consumption results in higher efficiency for power circuits. The FDM606P also has good temperature stability, which makes it suitable for the power control applications.
In summary, the FDM606P is a low cost, low power consumption, single N-channel enhancement mode MOSFET which is well-suited for variety of low-voltage, low-power applications such as DC-DC converters, switching regulators, logic circuits, power switches, and motor control. The advantages of the FDM606P include a low on-resistance channel and low power consumption, making it ideal for these types of applications.
The specific data is subject to PDF, and the above content is for reference
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